2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
Latest Publications

TOTAL DOCUMENTS

104

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781457718656, 9781457718649, 9781457718632

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222439 ◽

2012 ◽

Cited By ~ 1

Author(s):

E. M. Bazizi ◽

S. M. Pandey ◽

C. Wang ◽

I. Jiang ◽

S. Chu ◽

...

Keyword(s):

Laser Annealing ◽

Device Simulation ◽

Cmos Technology ◽

Metal Gate ◽

Annealing Conditions ◽

High K

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Relaxed Germanium on Porous Silicon Substrates

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222502 ◽

2012 ◽

Cited By ~ 3

Author(s):

Tobias F. Wietler ◽

Eddy P. Rugeramigabo ◽

Eberhard Bugiel ◽

Enrique Garralaga Rojas

Keyword(s):

Porous Silicon ◽

Silicon Substrates

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Program Committee

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222425 ◽

2012 ◽

Keyword(s):

Program Committee

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The Effect of Gate Length on Channel Strain of Recessed Source/Drain Si1-xCx

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222509 ◽

2012 ◽

Author(s):

Dae-Hong Ko ◽

Sun-Wook Kim ◽

Dae-Seop Byeon ◽

Sangmo Koo ◽

Mijin Jung ◽

...

Keyword(s):

Gate Length

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List of authors

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222437 ◽

2012 ◽

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The Effect of Dose of H and He Sequential Implantation in Germanium

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222495 ◽

2012 ◽

Author(s):

J. Y. Dai ◽

H. T. Jiang ◽

Z. F. Di ◽

M. Zhang

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Reduced Thermal Conductivity in SiGe Alloy-Based Superlattices for Thermoelectric Applications

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222507 ◽

2012 ◽

Author(s):

Z. Aksamija ◽

I. Knezevic

Keyword(s):

Thermal Conductivity ◽

Sige Alloy

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Morphology Evolution of Epitaxial SiGe in Patterns

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222455 ◽

2012 ◽

Author(s):

Birgit Seiss ◽

Didier Dutartre

Keyword(s):

Morphology Evolution

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First-Principles Study of GeO2/Ge Interfacial Traps and Oxide Defects

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222499 ◽

2012 ◽

Author(s):

Shang-Chun Lu ◽

Hung-Chih Chang ◽

Tien-Pei Chou ◽

Cheewee Liu

Keyword(s):

First Principles ◽

First Principles Study ◽

Oxide Defects

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2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

Relaxed Germanium on Porous Silicon Substrates

Program Committee

The Effect of Gate Length on Channel Strain of Recessed Source/Drain Si1-xCx

List of authors

The Effect of Dose of H and He Sequential Implantation in Germanium

Reduced Thermal Conductivity in SiGe Alloy-Based Superlattices for Thermoelectric Applications

Sponsors

Morphology Evolution of Epitaxial SiGe in Patterns

First-Principles Study of GeO2/Ge Interfacial Traps and Oxide Defects

Export Citation Format

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

Relaxed Germanium on Porous Silicon Substrates

Program Committee

The Effect of Gate Length on Channel Strain of Recessed Source/Drain Si1-xCx

List of authors

The Effect of Dose of H and He Sequential Implantation in Germanium

Reduced Thermal Conductivity in SiGe Alloy-Based Superlattices for Thermoelectric Applications

Sponsors

Morphology Evolution of Epitaxial SiGe in Patterns

First-Principles Study of GeO2/Ge Interfacial Traps and Oxide Defects

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
Latest Publications