Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
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9781424484935

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Post Si CMOS graphene nanoelectronics

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872211 ◽

2011 ◽

Author(s):

Chun-Yung Sung

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FDSOI radiation dosimeters

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872260 ◽

2011 ◽

Author(s):

Jeng-Bang Yau ◽

Michael S. Gordon ◽

Kenneth P. Rodbell ◽

Steven J. Koester ◽

Patrick W. DeHaven ◽

...

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New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872270 ◽

2011 ◽

Author(s):

Moon-Sik Seo ◽

Tetsuo Endoh

Keyword(s):

Interference Effect ◽

Design Method ◽

3 Dimensional ◽

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EUV lithography introduction at Chipmakers

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872264 ◽

2011 ◽

Author(s):

Christian Wagner ◽

Jose Bacelar ◽

Noreen Harned ◽

Erik Loopstra ◽

Stef Hendriks ◽

...

Keyword(s):

Euv Lithography

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High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872239 ◽

2011 ◽

Author(s):

W.-Y Loh ◽

Y. R. Yang ◽

P. Y. Hung ◽

B. Sassman ◽

C. Kenney ◽

...

Keyword(s):

High Temperature ◽

Contact Resistivity

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Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872235 ◽

2011 ◽

Author(s):

A. Prakash ◽

S. Maikap ◽

G. Chen ◽

F. Chen ◽

M.-J. Kao ◽

...

Keyword(s):

Resistive Switching ◽

Interfacial Layer ◽

Resistive Switching Memory ◽

Switching Memory

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Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872251 ◽

2011 ◽

Author(s):

Shimeng Yu ◽

Yi Wu ◽

Yang Chai ◽

J. Provine ◽

H.-S. Philip Wong

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VLSI-TSA organization

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872274 ◽

2011 ◽

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Physical IP and advanced SOI design for 22nm SOI technology

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872266 ◽

2011 ◽

Author(s):

Jean-Luc Pelloie ◽

Selma Laabidi ◽

Kenza Charafeddine ◽

Yves Laplanche

Keyword(s):

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Smart Power technologies on SOI

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872245 ◽

2011 ◽

Author(s):

Piet Wessels

Keyword(s):

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