2019 IEEE 11th International Memory Workshop (IMW)
Latest Publications

TOTAL DOCUMENTS

56
(FIVE YEARS 0)

H-INDEX

4
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Published By IEEE

9781728109817
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND

2019 ◽  
Author(s):  
S. Ramesh ◽  
S. Vadakupudhu Palayam ◽  
E. Rosseel ◽  
A. Arreghini ◽  
B. Kunert ◽  
...  

scholarly journals Retention Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions

2019 ◽  
Author(s):  
Benjamin Max ◽  
Thomas Mikolajick ◽  
Michael Hoffmann ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick
Keyword(s):  
Tunnel Junctions ◽  
Retention Characteristics

Retention and Endurance of FeFET Memory Cells

2019 ◽  
Author(s):  
T.P. Ma ◽  
Nanbo Gong
Keyword(s):  
Memory Cells

Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory

2019 ◽  
Author(s):  
N. Gong ◽  
W.C. Chien ◽  
A. Ray ◽  
L.M. Gignac ◽  
C.W. Yeh ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Cross Point ◽  
Pillar Cell

Study of Self-Healing 3D NAND Flash with Micro Heater to Improve the Performances and Lifetime for Fast NAND in NVDIMM Applications

2019 ◽  
Author(s):  
Tzu-Hsuan Hsu ◽  
Hang-Ting Lue ◽  
Pei-Ying Du ◽  
Wei-Chen Chen ◽  
Teng-Hao Yeh ◽  
...  
Keyword(s):  
Self Healing ◽  
Nand Flash

Direct insight to SRAM array devices in advanced FinFET nodes by large scale ultra-fast in-situ characterization

2019 ◽  
Author(s):  
Yuncheng Song ◽  
Randy Mann ◽  
Sheng Xie ◽  
Lucile C. Teague Sheridan ◽  
Joseph Versaggi ◽  
...  
Keyword(s):  
Large Scale ◽  
In Situ Characterization

scholarly journals Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

2019 ◽  
Author(s):  
T. Francois ◽  
J. Coignus ◽  
L. Grenouillet ◽  
J.P. Barnes ◽  
N. Vaxelaire ◽  
...  
Keyword(s):  
Switching Performance ◽  
Si Doping ◽  
Bias Pulse ◽  
Doping Technique ◽  
Memory Applications

Impact of SiON tunnel layer composition on 3D NAND cell performance

2019 ◽  
Author(s):  
L. Breuil ◽  
L. Nyns ◽  
K. Banerjee ◽  
S. Vadakupudhu Palayam ◽  
A. Subirats ◽  
...  
Keyword(s):  
Cell Performance ◽  
Tunnel Layer ◽  
Layer Composition
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