2019 IEEE 11th International Memory Workshop (IMW)
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TOTAL DOCUMENTS

56
(FIVE YEARS 56)

H-INDEX

4
(FIVE YEARS 4)

Published By IEEE

9781728109817
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

scholarly journals Retention Characteristics of Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions

2019 ◽  
Author(s):  
Benjamin Max ◽  
Thomas Mikolajick ◽  
Michael Hoffmann ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick
Keyword(s):  
Tunnel Junctions ◽  
Retention Characteristics

First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND

2019 ◽  
Author(s):  
S. Ramesh ◽  
S. Vadakupudhu Palayam ◽  
E. Rosseel ◽  
A. Arreghini ◽  
B. Kunert ◽  
...  

Direct insight to SRAM array devices in advanced FinFET nodes by large scale ultra-fast in-situ characterization

2019 ◽  
Author(s):  
Yuncheng Song ◽  
Randy Mann ◽  
Sheng Xie ◽  
Lucile C. Teague Sheridan ◽  
Joseph Versaggi ◽  
...  
Keyword(s):  
Large Scale ◽  
In Situ Characterization

Impact of SiON tunnel layer composition on 3D NAND cell performance

2019 ◽  
Author(s):  
L. Breuil ◽  
L. Nyns ◽  
K. Banerjee ◽  
S. Vadakupudhu Palayam ◽  
A. Subirats ◽  
...  
Keyword(s):  
Cell Performance ◽  
Tunnel Layer ◽  
Layer Composition
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