Proceedings of the Twelfth International Conference on the Physics of Semiconductors
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235

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H-INDEX

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Published By Vieweg+Teubner Verlag

9783519030133, 9783322947741

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Correlated Hartree-Fock Energy Bands for Semiconductors

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_26 ◽

1974 ◽

pp. 174-178 ◽

Cited By ~ 1

Author(s):

N. E. Brener ◽

T. C. Collins

Keyword(s):

Energy Bands ◽

Hartree Fock

The Anisotropy of Electroreflectance and Band Structure Analysis

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_24 ◽

1974 ◽

pp. 161-168 ◽

Cited By ~ 1

Author(s):

R. Enderlein

Keyword(s):

Band Structure ◽

Structure Analysis

Internal Photoemission: Theory and Experiment

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_230 ◽

1974 ◽

pp. 1319-1323

Author(s):

Daniel F. Blossey

Keyword(s):

Internal Photoemission ◽

Theory And Experiment

UV — Photoemission on the (111) — Faces of GaP and GaAs

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_226 ◽

1974 ◽

pp. 1300-1303

Author(s):

K. Jacobi ◽

W. Ranke

Optical Rectification and Photon Drag in p-Type GaAs at 10.6μm and 1.06μm

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_220 ◽

1974 ◽

pp. 1257-1261 ◽

Cited By ~ 3

Author(s):

J. M. Doviak ◽

S. Kothari

Keyword(s):

Optical Rectification ◽

P Type

Linear and Nonlinear Optical Response of Free Holes in Tellurium

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_217 ◽

1974 ◽

pp. 1242-1246

Author(s):

Wlodek Zawadzki

Keyword(s):

Nonlinear Optical ◽

Optical Response ◽

Nonlinear Optical Response ◽

Linear And Nonlinear

Determination of the Optical Constants of Tellurium in the Fundamental Absorption Region by the Excitation of Electromagnetic Surface Waves

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_215 ◽

1974 ◽

pp. 1232-1236

Author(s):

J. Huber ◽

A. Otto ◽

W. Sohler

Keyword(s):

Surface Waves ◽

Optical Constants ◽

Absorption Region ◽

Fundamental Absorption Region

The Temperature Shift of the Absorption Edge in Cubic ZnS

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_211 ◽

1974 ◽

pp. 1212-1216

Author(s):

Y. Brada ◽

B. G. Yacobi

Keyword(s):

Absorption Edge ◽

Temperature Shift

Electroreflectance of PbTe — Band Separations and Parity at L

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_206 ◽

1974 ◽

pp. 1186-1189

Author(s):

R. Glosser ◽

J. Kinoshita ◽

B. Rennex

Low Temperature Galvanomagnetic Properties of n-Type Hg·8Cd·2Te

Proceedings of the Twelfth International Conference on the Physics of Semiconductors ◽

10.1007/978-3-322-94774-1_200 ◽

1974 ◽

pp. 1157-1161 ◽

Cited By ~ 8

Author(s):

R. Dornhaus ◽

H. Happ ◽

K.-H. Müller ◽

G. Nimtz ◽

W. Schlabitz ◽

...

Keyword(s):

Low Temperature ◽

Galvanomagnetic Properties

Proceedings of the Twelfth International Conference on the Physics of SemiconductorsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Vieweg+Teubner Verlag

Correlated Hartree-Fock Energy Bands for Semiconductors

The Anisotropy of Electroreflectance and Band Structure Analysis

Internal Photoemission: Theory and Experiment

UV — Photoemission on the (111) — Faces of GaP and GaAs

Optical Rectification and Photon Drag in p-Type GaAs at 10.6μm and 1.06μm

Linear and Nonlinear Optical Response of Free Holes in Tellurium

Determination of the Optical Constants of Tellurium in the Fundamental Absorption Region by the Excitation of Electromagnetic Surface Waves

The Temperature Shift of the Absorption Edge in Cubic ZnS

Electroreflectance of PbTe — Band Separations and Parity at L

Low Temperature Galvanomagnetic Properties of n-Type Hg·8Cd·2Te

Proceedings of the Twelfth International Conference on the Physics of Semiconductors
Latest Publications