Silicon-on-Insulator
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Published By Springer Netherlands

9789401088466, 9789400953116
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Optically-Heated Zone Crystal Growth of Silicon Thin Films on Amorphous Substrates

1985 ◽  
pp. 129-136 ◽  
Author(s):  
D. K. Biegelsen ◽  
W. G. Hawkins ◽  
L. E. Fennell ◽  
N. M. Johnson ◽  
M. D. Moyer
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Heated Zone ◽  
Silicon Thin Films ◽  
Amorphous Substrates

High Speed SOI-CMOS devices by Laser Recrystallization Technique

1985 ◽  
pp. 263-268 ◽  
Author(s):  
T. Nishimura ◽  
Y. Akasaka ◽  
H. Nakata
Keyword(s):  
High Speed ◽  
Laser Recrystallization ◽  
Soi Cmos

Characterization of Solid Phase Epitaxially Grown Si Films on SiO2

1985 ◽  
pp. 231-248 ◽  
Author(s):  
M. Tamura ◽  
M. Miyao ◽  
T. Tokuyama ◽  
H. Yamamoto ◽  
H. Ishiwara ◽  
...  
Keyword(s):  
Solid Phase ◽  
Si Films

Formation of a Silicon-On-Insulator Structure by Solid-Phase Epitaxy

1985 ◽  
pp. 209-230 ◽  
Author(s):  
Y. Kunii ◽  
M. Tabe ◽  
K. Kajiyama
Keyword(s):  
Solid Phase ◽  
Silicon On Insulator ◽  
Solid Phase Epitaxy

Growth Mechanisms and Defects in Si Layers Grown on SiO2 by Bridging (Lateral Seeded) Epitaxy

1985 ◽  
pp. 3-19 ◽  
Author(s):  
T. Tokuyama ◽  
M. Tamura ◽  
N. Natsuaki ◽  
M. Ohkura ◽  
M. Ichikawa ◽  
...  
Keyword(s):  
Growth Mechanisms

Device Application of Simox (Separation by IMplanted OXygen) Structure

1985 ◽  
pp. 283-294
Author(s):  
K. Kajiyama ◽  
K. Izumi ◽  
S. Nakashima
Keyword(s):  
Device Application

Laser Crystallization of Polycrystalline Silicon by Controlling Lateral Thermal Profile

1985 ◽  
pp. 21-28
Author(s):  
T. Nishimura ◽  
Y. Akasaka ◽  
H. Nakata ◽  
K. Sugahara ◽  
T. Isu
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Crystallization ◽  
Thermal Profile
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