Optically-Heated Zone Crystal Growth of Silicon Thin Films on Amorphous Substrates

1985 ◽  
pp. 129-136 ◽  
Author(s):  
D. K. Biegelsen ◽  
W. G. Hawkins ◽  
L. E. Fennell ◽  
N. M. Johnson ◽  
M. D. Moyer
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Heated Zone ◽  
Silicon Thin Films ◽  
Amorphous Substrates

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Constrained Facet Crystal Growth of Thin Films on Amorphous Substrates

1987 ◽  
Vol 134 (10) ◽  
pp. 2511-2517 ◽  
Author(s):  
M. Aklufi ◽  
I. Cadoff
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Amorphous Substrates ◽  
Facet Crystal

Novel Method for the Formation of Large‐Grained, Silicon Thin Films on Amorphous Substrates

1998 ◽  
Vol 145 (11) ◽  
pp. 3963-3966 ◽  
Author(s):  
Rajiv K. Singh ◽  
Soon‐Moon Jung ◽  
Seung‐Mahn Lee ◽  
Rolf E. Hummel
Keyword(s):  
Thin Films ◽  
Silicon Thin Films ◽  
Amorphous Substrates ◽  
Novel Method

Crystal growth of polycrystalline silicon thin films for solar cells evaluated by scanning probe microscopy

2004 ◽  
Vol 338-340 ◽  
pp. 682-685 ◽  
Author(s):  
R. Muhida ◽  
T. Kawamura ◽  
T. Harano ◽  
M. Okajima ◽  
T. Toyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Crystal Growth ◽  
Scanning Probe Microscopy ◽  
Polycrystalline Silicon ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Silicon Thin Films

Lateral Solid Phase Crystallization of Amorphous Silicon Under High Pressure

1999 ◽  
Vol 557 ◽  
Author(s):  
Seung-Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Amorphous Silicon ◽  
High Pressures ◽  
Solid Phase ◽  
Applied Pressure ◽  
Polycrystalline Diamond ◽  
Silicon Thin Films ◽  
Amorphous Substrates ◽  
Seeded Crystallization

AbstractWe have investigated a novel surface-seeded crystallization technique at low processing temperatures (≤ 550°C) and high pressures (10MPa~25MPa) using polished polycrystalline diamond seeds. By controlling the high pressure, the nucleation and growth of silicon can be controlled to obtain improved quality silicon films on amorphous substrates at low temperatures. Depending on the annealing temperature and applied pressure, the orientation of crystallized silicon thin films varies as seen by x-ray diffraction and transmission electron microscopy results. In addition, crystallization of amorphous silicon thin films has effect on their roughness.

Crystal growth in amorphous silicon thin films induced by incoherent light flashes

1983 ◽  
Vol 42 (12) ◽  
pp. 1026-1028 ◽  
Author(s):  
B. Y. Tong ◽  
K. Ebihara ◽  
P. K. John ◽  
S. K. Wong ◽  
K. P. Chik
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Amorphous Silicon ◽  
Incoherent Light ◽  
Silicon Thin Films ◽  
Light Flashes

Electronic Defects in Beam - Crystallized Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Thin Films ◽  
Single Crystal Silicon ◽  
Experimental Investigations ◽  
Bulk Single Crystal ◽  
Bulk Silicon ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Amorphous Substrates ◽  
Directed Energy ◽  
Electronic Defects

ABSTRACTDirected energy sources have been used to recrystallize implanted amorphous layers in bulk single - crystal silicon and to crystallize silicon thin films on insulating amorphous substrates. All investigated forms of beam annealing leave residual electronic defects in and near the recrystallized layer on bulk silicon, with densities in excess of those obtained by conventional furnace annealing. This paper summarizes the general observations that may be drawn from numerous experimental investigations of electronic defects in CW beam - recrystallized bulk silicon and affirms the timeliness of similar comprehensive studies of residual defects in crystallized - silicon thin films.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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