2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
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TOTAL DOCUMENTS

622

(FIVE YEARS 0)

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9

(FIVE YEARS 0)

Published By IEEE

9781424457977

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Resistive switching mechanism of Cu doped ZrO2-based RRAM

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667589 ◽

2010 ◽

Author(s):

Shi-Bing Long ◽

Qi Liu ◽

Hang-Bing Lv ◽

Ying-Tao Li ◽

Yan Wang ◽

...

Keyword(s):

Resistive Switching ◽

Switching Mechanism ◽

Resistive Switching Mechanism

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A 1V, 240 nW, 7 ppm/°C, high PSRR CMOS voltage reference circuit with curvature-compensation

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667671 ◽

2010 ◽

Author(s):

Pengpeng Yuan ◽

Dongmei Li ◽

Xin Wang ◽

Liyuan Liu ◽

Chun Zhang ◽

...

Keyword(s):

Voltage Reference ◽

Reference Circuit ◽

Cmos Voltage Reference

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MuGFETs for microwave and millimeter wave applications

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667308 ◽

2010 ◽

Author(s):

J. C. Tinoco ◽

J.-P. Raskin ◽

A. Cerdeira ◽

M. Estrada

Keyword(s):

Millimeter Wave

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A new type of CMOS inverter with Lubistor load and TFET driver for sub-20 nm technology generation

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667845 ◽

2010 ◽

Author(s):

Hsuan-Hsu Chen ◽

Jyi-Tsong Lin ◽

Kuan-Yu Lu ◽

Yi-Chuen Eng ◽

Po-Hsieh Lin

Keyword(s):

Cmos Inverter ◽

Technology Generation ◽

New Type ◽

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Partial SOI power LDMOS with a variable low-k dielectric buried layer and a buried p-layer

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667278 ◽

2010 ◽

Author(s):

Xiaorong Luo ◽

Yuangang Wang ◽

Guoliang Yao ◽

Lianfei Lei ◽

Bo Zhang ◽

...

Keyword(s):

Buried Layer ◽

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A dual-band SiGe HBT low noise amplifier

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667287 ◽

2010 ◽

Author(s):

Hong-yun Xie ◽

Zhi-yi Lu ◽

Wan-rong Zhang ◽

Pei Shen ◽

Chun-bao Ding ◽

...

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Dual Band ◽

Sige Hbt ◽

Noise Amplifier

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ESD design for power analog circuit

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667808 ◽

2010 ◽

Author(s):

V.A. Vashchenko ◽

A.A. Shibkov

Keyword(s):

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Design of an IPSec IP-Core for 10 Gigabit Ethernet Security Processor

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667343 ◽

2010 ◽

Author(s):

Li Wang ◽

Yun Niu ◽

Liji Wu ◽

Xiangmin Zhang

Keyword(s):

Ip Core ◽

Gigabit Ethernet ◽

Security Processor ◽

10 Gigabit Ethernet

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Research and design of a white LED driver chip applied in backlight

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667362 ◽

2010 ◽

Author(s):

Yi-zhong Yang ◽

Guang-jun Xie ◽

Hui-fang Xu ◽

Sheng-tao Wei

Keyword(s):

White Led ◽

White Led Driver ◽

Research And Design

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Electrode design of coplanar-grid diamond film detectors by finite element method

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667705 ◽

2010 ◽

Author(s):

Qingkai Zeng ◽

Xiaoyu Pan ◽

Mei Bi ◽

Xingmao Yan ◽

Linjun Wang ◽

...

Keyword(s):

Finite Element Method ◽

Finite Element ◽

Diamond Film ◽

Electrode Design ◽

Coplanar Grid ◽

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