A compact modeling of Si nanowire MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667451 ◽

2010 ◽

Author(s):

Kenji Natori

Keyword(s):

Compact Modeling ◽

Si Nanowire ◽

Nanowire Mosfets

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Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

Solid-State Electronics ◽

10.1016/j.sse.2015.06.008 ◽

2015 ◽

Vol 111 ◽

pp. 188-195 ◽

Author(s):

G. Hiblot ◽

Q. Rafhay ◽

F. Boeuf ◽

G. Ghibaudo

Keyword(s):

Subthreshold Swing ◽

Compact Modeling ◽

Double Gate ◽

Nanowire Mosfets

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Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2048405 ◽

2010 ◽

Vol 57 (7) ◽

pp. 1626-1635 ◽

Author(s):

Antonio Martinez ◽

Natalia Seoane ◽

Andrew R. Brown ◽

John R. Barker ◽

Asen Asenov

Keyword(s):

Simulation Study ◽

Three Dimensional ◽

Interface Roughness ◽

Combined Effect ◽

Si Nanowire ◽

Nanowire Mosfets ◽

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Low-frequency noise reduction in Si Nanowire MOSFETs

ECS Meeting Abstracts ◽

10.1149/ma2012-01/16/740 ◽

2012 ◽

Keyword(s):

Noise Reduction ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Si Nanowire ◽

Nanowire Mosfets

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Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2015.7158572 ◽

2015 ◽

Author(s):

Hiroaki Fujihara ◽

Naoya Morioka ◽

Hajime Tanaka ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Hole Mobility ◽

Cross Sectional ◽

Si Nanowire ◽

Nanowire Mosfets ◽

Sectional Shape

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Impact of Quantum Effect on Diffusion Layer Resistance of Si Nanowire MOSFETs

10.7567/ssdm.2008.h-5-2 ◽

2008 ◽

Author(s):

D. Hagishima ◽

K. Matsuzawa ◽

S. Odanaka

Keyword(s):

Diffusion Layer ◽

Quantum Effect ◽

Si Nanowire ◽

Layer Resistance ◽

Nanowire Mosfets

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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2012.6343336 ◽

2012 ◽

Author(s):

M. Koyama ◽

M. Casse ◽

R. Coquand ◽

S. Barraud ◽

H. Iwai ◽

...

Keyword(s):

Carrier Transport ◽

Si Nanowire ◽

Nanowire Mosfets

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Compact modeling of gate-all-around silicon nanowire MOSFETs

10.32657/10356/48643 ◽

2012 ◽

Author(s):

Shihuan Lin

Keyword(s):

Silicon Nanowire ◽

Compact Modeling ◽

Nanowire Mosfets

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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292332 ◽

2015 ◽

Author(s):

Luca Donetti ◽

Carlos Sampedro ◽

Francisco Gamiz ◽

Andres Godoy ◽

Francisco J. Garcia-Ruiz ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Si Nanowire ◽

Ensemble Monte Carlo ◽

Ensemble Monte Carlo Simulation ◽

Nanowire Mosfets

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Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2512660 ◽

2016 ◽

Vol 63 (3) ◽

pp. 903-909 ◽

Author(s):

Chun-Yu Chen ◽

Jyi-Tsong Lin ◽

Meng-Hsueh Chiang

Keyword(s):

Si Nanowire ◽

Kink Effect ◽

Nanowire Mosfets

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High on-currents with highly strained Si nanowire MOSFETs

2014 15th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2014.6813909 ◽

2014 ◽

Author(s):

G. V. Luong ◽

L. Knoll ◽

M. J. Suess ◽

H. Sigg ◽

A. Schafer ◽

...

Keyword(s):

Strained Si ◽

Si Nanowire ◽

Nanowire Mosfets ◽

Highly Strained

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