2007 IEEE International SOI Conference
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80
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7
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Published By IEEE

9781424408795, 9781424408801
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices

2007 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Hsuan-Ming Huang ◽  
Ta-Ching Yeh
Keyword(s):  
Soi Devices

45 nm SOI and Beyond - Getting to a General Purpose Technology

2007 ◽  
Author(s):  
Subramanian S. Iyer ◽  
Edward J. Nowak
Keyword(s):  
General Purpose ◽  
General Purpose Technology

Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer

2007 ◽  
Author(s):  
Paul Patruno ◽  
Marek Kostrzewa ◽  
Karine Landry ◽  
Weize Xiong ◽  
C. Rinn Cleavelin ◽  
...  
Keyword(s):  
Insulator Layer ◽  
Buried Layer ◽  
Nitride Oxide

On the design of 60 GHz integrated antennas on 0.13 μm SOI technology

2007 ◽  
Author(s):  
M.H. Barakat ◽  
F. Ndagijimana ◽  
C. Delaveaud
Keyword(s):  
60 Ghz ◽  
Integrated Antennas ◽  
Soi Technology

Geometric Magnetoresistance and Mobility Behavior in Single-Gate and Double-Gate SOI Devices

2007 ◽  
Author(s):  
N. Rodriguez ◽  
L. Donetti ◽  
F. Gamiz ◽  
S. Cristoloveanu
Keyword(s):  
Double Gate ◽  
Mobility Behavior ◽  
Soi Devices

An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing

2007 ◽  
Author(s):  
P. Grudowski ◽  
V. Dhandapani ◽  
S. Zollner ◽  
D. Goedeke ◽  
K. Loiko ◽  
...  
Keyword(s):  
Carbon Incorporation ◽  
Silicon Carbon ◽  
Spike Annealing

A Quantum Definition of Threshold Voltage in MuGFETs

2007 ◽  
Author(s):  
Se Re Na Yun ◽  
Chong Gun Yu ◽  
Jong Tae Park ◽  
Chi-Woo Lee ◽  
D. Lederer ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Definition Of
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