2008 20th International Symposium on Power Semiconductor Devices and IC's
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9781424415328
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High side n-channel and bidirectional Trench Lateral Power MOSFETs on one chip for DCDC converter ICs

2008 ◽  
Author(s):  
Mutsumi Sawada ◽  
Masaharu Yamaji ◽  
Shinichiro Matsunaga ◽  
Masanobu Iwaya ◽  
Hidenori Takahashi ◽  
...  
Keyword(s):  
Power Mosfets ◽  
High Side

Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm2

2008 ◽  
Author(s):  
W. Huang ◽  
Z. Li ◽  
T. P. Chow ◽  
Y. Niiyama ◽  
T. Nomura ◽  
...  
Keyword(s):  
Enhancement Mode

High doped drain double-Resurf 100V P-channel MOS on SOI 0.35 ¿m BCD technology

2008 ◽  
Author(s):  
Vincenzo Palumbo ◽  
Mirko Venturato ◽  
Michele Gallo ◽  
Fiorella Pozzobon ◽  
Maria Paola Galbiati ◽  
...  

The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method

2008 ◽  
Author(s):  
Syotaro Ono ◽  
Wataru Saito ◽  
Masaru Izumisawa ◽  
Yasuto Sumi ◽  
Shoichiro Kurushima ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optimal Profile ◽  
Profile Design
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