[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
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A novel high voltage three-phase monolithic inverter IC with two current levels sensing

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146110 ◽

2002 ◽

Author(s):

H. Miyazaki ◽

N. Sakurai ◽

K. Onda ◽

T. Tanaka ◽

M. Mori ◽

...

Keyword(s):

High Voltage ◽

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Operation of IGBTs at low temperatures

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146105 ◽

2002 ◽

Author(s):

T.P. Chow ◽

K.C. So ◽

D. Lau

Keyword(s):

Low Temperatures

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CMOS compatible 250 V lateral insulated base transistors

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146094 ◽

2002 ◽

Author(s):

E.M. Sankara Narayanan ◽

G.A.J. Amaratunga ◽

W.I. Milne ◽

Q. Huang

Keyword(s):

Cmos Compatible

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600 V, 25 A dielectrically-isolated power IC with vertical IGBT

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146062 ◽

2002 ◽

Author(s):

T. Mizoguchi ◽

T. Shirasawa ◽

M. Mori ◽

Y. Sugawara

Keyword(s):

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Extension of RESURF principle to dielectrically isolated power devices

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146059 ◽

2002 ◽

Author(s):

Y.S. Huang ◽

B.J. Baliga

Keyword(s):

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Impact of dielectric isolation technology on power ICs

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146056 ◽

2002 ◽

Author(s):

A. Nakagawa

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A 1500 V IGBT with a self-aligned DMOS structure for high resolution CRT operated up to 100 kHz

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146103 ◽

2002 ◽

Author(s):

M. Mori ◽

Y. Nakano ◽

Y. Yasuda ◽

T. Yatsuo ◽

Y. Sugawara

Keyword(s):

High Resolution

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Improvement of high speed blocking voltage by means of metal field plate for GaAs Schottky power rectifiers

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146089 ◽

2002 ◽

Author(s):

K. Ohtsuka ◽

Y. Usui

Keyword(s):

Field Plate ◽

Blocking Voltage

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Computer aided design tools for power IC's

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146055 ◽

2002 ◽

Author(s):

W. Fichtner ◽

J. Burgler ◽

H. Dettmer ◽

H. Lendenmann ◽

S. Muller ◽

...

Keyword(s):

Computer Aided Design ◽

Design Tools ◽

Computer Aided ◽

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Numerical analysis of switching in the IGBT triggered thyristor

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1991.146083 ◽

2002 ◽

Author(s):

H. Sumida ◽

K. Ueno ◽

N. Iwamuro ◽

S. Tagami

Keyword(s):

Numerical Analysis

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