Small Signal Amplifier Design and Measurement

Small Signal Amplifier Design

Radio Frequency Transistors ◽

10.1016/b978-0-08-057143-0.50017-0 ◽

1993 ◽

pp. 199-231

Author(s):

Norm Dye ◽

Helge Granberg

Keyword(s):

Small Signal ◽

Signal Amplifier ◽

Amplifier Design

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J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

International Journal of Microwave and Wireless Technologies ◽

10.1017/s175907871500080x ◽

2015 ◽

Vol 7 (3-4) ◽

pp. 339-347 ◽

Cited By ~ 2

Author(s):

Stefan Malz ◽

Bernd Heinemann ◽

Rudolf Lachner ◽

Ullrich R. Pfeiffer

Keyword(s):

Noise Figure ◽

High Gain ◽

Low Noise ◽

Small Signal ◽

Sige Hbt ◽

Bicmos Technology ◽

Signal Amplifier ◽

Sige Bicmos ◽

Amplifier Design ◽

Noise Amplifier

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmaxof 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

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