Compact and Large‐Area Perovskite Films Achieved via Soft‐Pressing and Multi‐Functional Polymerizable Binder for Flat‐Panel X‐Ray Imager

2022 ◽  
pp. 2110729
Author(s):  
Mengling Xia ◽  
Zihao Song ◽  
Haodi Wu ◽  
Xinyuan Du ◽  
Xin He ◽  
...  
Keyword(s):  
2001 ◽  
Vol 11 (9) ◽  
pp. 1688-1696 ◽  
Author(s):  
Svenja P. Hennigs ◽  
Marietta Garmer ◽  
Horst J. Jaeger ◽  
Reinhard Classen ◽  
Andreas Jacobs ◽  
...  

2000 ◽  
Vol 35 (4) ◽  
pp. 260-266 ◽  
Author(s):  
MARTIN SPAHN ◽  
MICHAEL STROTZER ◽  
MARKUS VÖLK ◽  
STEFAN BÖHM ◽  
BERNHARD GEIGER ◽  
...  

1993 ◽  
Author(s):  
Larry E. Antonuk ◽  
John Yorkston ◽  
Weidong Huang ◽  
John M. Boudry ◽  
E. J. Morton ◽  
...  
Keyword(s):  
X Ray ◽  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Yangyang Zhao ◽  
Yicong Chen ◽  
Guofu Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
...  

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.


2000 ◽  
Author(s):  
Thierry Ducourant ◽  
Marc Michel ◽  
Gerard Vieux ◽  
Tobias Peppler ◽  
J. C. Trochet ◽  
...  
Keyword(s):  

2003 ◽  
Vol 764 ◽  
Author(s):  
Jang-Yong Choi ◽  
Ji-Koon Park ◽  
Dong-Gil Lee ◽  
Sang-Sik Kang ◽  
Sang-Hee Nam

AbstractNowadays, large area, flat panel solid state detectors are being investigated for digital radiography. In this paper, development and evaluation of a selenium-based flat-panel digital xray detector are described. The prototype detector has a pixel pitch of 139μm and a total active imaging area of 7″×8.5″, giving a total of 1.9 million pixel. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500μm. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity of the response of exposure, the modulation transfer function(MTF) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was 4.16×106 ehp/pixel mR at the bias field of 10 V/μm: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%.


1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).


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