Intrinsic Electronic Transport Properties and Carrier Densities in PtS 2 and SnSe 2 : Exploration of n + ‐Source for 2D Tunnel FETs

2021 ◽  
pp. 2100292
Author(s):  
Yuichiro Sato ◽  
Tomonori Nishimura ◽  
Dong Duanfei ◽  
Keiji Ueno ◽  
Keisuke Shinokita ◽  
...  
2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  

Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...


2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.


2021 ◽  
Vol 118 (10) ◽  
pp. 103901
Author(s):  
Min Zhang ◽  
Wei Liu ◽  
Cheng Zhang ◽  
Sen Xie ◽  
Fuqiang Hua ◽  
...  

Author(s):  
G. R. Berdiyorov ◽  
U. Khalilov ◽  
H. Hamoudi ◽  
Erik C. Neyts

AbstractUsing density functional theory in combination with the Green’s functional formalism, we study the effect of surface functionalization on the electronic transport properties of 1D carbon allotrope—carbyne. We found that both hydrogenation and fluorination result in structural changes and semiconducting to metallic transition. Consequently, the current in the functionalization systems increases significantly due to strong delocalization of electronic states along the carbon chain. We also study the electronic transport in partially hydrogenated carbyne and interface structures consisting of pristine and functionalized carbyne. In the latter case, current rectification is obtained in the system with rectification ratio up to 50%. These findings can be useful for developing carbyne-based structures with tunable electronic transport properties.


Nano Letters ◽  
2013 ◽  
Vol 13 (9) ◽  
pp. 4212-4216 ◽  
Author(s):  
Britton W. H. Baugher ◽  
Hugh O. H. Churchill ◽  
Yafang Yang ◽  
Pablo Jarillo-Herrero

2015 ◽  
Vol 21 (3) ◽  
Author(s):  
Anurag Srivastava ◽  
Chetan Bhat ◽  
Sumit Kumar Jain ◽  
Pankaj Kumar Mishra ◽  
Ranjeet Brajpuriya

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