The reliability of microfocus x radiography for detecting internal voids in structural ceramic test specimens was statistically evaluated. The microfocus system was operated in the projection mode using low x-ray photon energies (<20 keV) and a 10 μm focal spot. The statistics were developed for implanted internal voids in green and sintered silicon carbide and silicon nitride test specimens. These statistics were compared with previously obtained statistics for implanted surface voids in similar specimens. Problems associated with void implantation and characterization are discussed. Statistical results are given as probability-of-detection curves at a 95% confidence level for voids ranging in size from 20–528 μm in diameter.
Determination of trace impurities in sintered silicon carbide and silicon nitride by the pressure acid decomposition/ICP-AES.