Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide

Additive manufactured porous SiC is a promising material applied in extreme conditions characterised by high temperatures, chemical corrosion, and irradiation etc. However, residual Si’s existence deteriorates its performance and limits its application in harsh environments. In this study, B4C was introduced into the selective laser sintering process of SiC, and its effects on forming ability, pore parameters, microstructure, and phases were investigated. The results showed that when B4C was added, the processing window was enlarged. The minimum energy density was reduced from 457 J/cm2 to 214 J/cm2 when the content of B4C reached 15 wt%. Microstructure orientation was enhanced, and the residual silicon content was decreased from 38 at.% to about 8 at.%. Small pores were turned into large pores with the increase of B4C addition. The findings indicate that the addition of B4C increases the amount of liquid phase during the laser sintering process of silicon carbide, improving the SiC struts’ density and reducing the residual silicon by reacting with it. Therefore, the addition of B4C will help improve the application performance of selected laser-sintered silicon carbide under extreme conditions.