scholarly journals Determination of trace impurities in sintered silicon carbide and silicon nitride by the pressure acid decomposition/ICP-AES.

1992 ◽  
Vol 41 (12) ◽  
pp. T151-T156 ◽  
Author(s):  
Yoshinori UWAMINO ◽  
Hisashi MORIKAWA ◽  
Akira TSUGE ◽  
Kiyoshi NAKANE ◽  
Yasuo IIDA ◽  
...  
1989 ◽  
Vol 97 (1132) ◽  
pp. 1466-1470
Author(s):  
Atsushi CHINO ◽  
Hideo IWATA ◽  
Sirou TORIZUKA ◽  
Kazuya YABUTA

2012 ◽  
Vol 32 (9) ◽  
pp. 1893-1899 ◽  
Author(s):  
Ulrich Degenhardt ◽  
Frank Stegner ◽  
Christian Liebscher ◽  
Uwe Glatzel ◽  
Karl Berroth ◽  
...  

1990 ◽  
Vol 39 (6) ◽  
pp. T83-T87 ◽  
Author(s):  
Hiroyasu YOSHIKAWA ◽  
Youichi ISHIBASHI ◽  
Naoki GUNJI ◽  
Kouichi SASAYAMA ◽  
Takeshi MISUMI

1986 ◽  
Vol 1 (3) ◽  
pp. 457-467 ◽  
Author(s):  
George Y. Baaklini ◽  
Don J. Roth

The reliability of microfocus x radiography for detecting internal voids in structural ceramic test specimens was statistically evaluated. The microfocus system was operated in the projection mode using low x-ray photon energies (<20 keV) and a 10 μm focal spot. The statistics were developed for implanted internal voids in green and sintered silicon carbide and silicon nitride test specimens. These statistics were compared with previously obtained statistics for implanted surface voids in similar specimens. Problems associated with void implantation and characterization are discussed. Statistical results are given as probability-of-detection curves at a 95% confidence level for voids ranging in size from 20–528 μm in diameter.


1996 ◽  
Vol 45 (12) ◽  
pp. 1139-1144 ◽  
Author(s):  
Hirohito NAKA ◽  
Hirofumi KURAYASU

2015 ◽  
Vol 30 (4) ◽  
pp. 909-915 ◽  
Author(s):  
Zheng Wang ◽  
Junye Zhang ◽  
Guoxia Zhang ◽  
Deren Qiu ◽  
Pengyuan Yang

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.


1995 ◽  
Vol 44 (4) ◽  
pp. 319-324 ◽  
Author(s):  
Kiyoshi NAKANE ◽  
Yoshinori UWAMINO ◽  
Hisashi MORIKAWA ◽  
Akira TSUGE ◽  
Yasuo IIDA ◽  
...  

1993 ◽  
Vol 314 ◽  
Author(s):  
Iftikhar Ahmad ◽  
Richard Silberglitf

AbstractIn the past several years there has been an explosive growth in the use of microwave energy for the processing of a host of materials. Microwave energy provides rapid internal heating which results in an overall reduction in the processing time. The important features of microwave processing are described, as well as several applications.Microwave energy has been used by a few groups for the joining of alumina, mullite, silicon nitride and silicon carbide. The work performed by these groups will be reviewed. Typically, a single mode microwave applicator has been used to join ceramics at temperatures ranging between 1250°C - 1800°C. Microwave joining of ceramics was achieved in a matter of minutes, in contrast to hours reported by conventional methods. The strength of the joints was equal to or greater than the as-received materials. Joining of specimens of sintered silicon carbide (Hexoloy ™ ) using interlayers, and direct joining of reaction bonded silicon carbide (RBSC) to itself and Hexoloy™ has been accomplished recently. Both single mode and multimode microwave applicators were used and larger specimens of RBSC having complex shapes were joined using hybrid heating. The paper describes microwave joining apparatus, techniques and results.


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