Development of thermal flow simulation method for switch mode power supplies and its integration with electric circuit analysis (in the case of natural convection air cooled switch mode power supply)

2004 ◽  
Vol 33 (8) ◽  
pp. 473-489 ◽  
Author(s):  
Katsuhiro Koizumi ◽  
Akito Joboji ◽  
Kuniaki Nagahara ◽  
Masaru Ishizuka
Author(s):  
Katsuhiro Koizumi ◽  
Akito Joboji ◽  
Kuniaki Nagahara ◽  
Masaru Ishizuka

This paper describes an application example of thermal flow simulation to the design of a switch mode power supply (SMPS) that is natural convection air-cooled. In this analysis, the modeling of printed circuit board (PCB) and power semiconductor devices was examined using the design of experiments method. The PCB was treated as a simple plate, and average thermal conductivity was not considered. The power semiconductor devices were modeled as a simple hexahedral resistive network block. As the heat generation sources, a field effect transistor (FET) and a diode were considered in the simulation, and the calculation method of power loss is described. The difference between measured and calculated values for power semiconductor devices was found to be within approximately 10 K.


Volume 4 ◽  
2004 ◽  
Author(s):  
Katsuhiro Koizumi ◽  
Masaru Ishizuka

This paper describes the development of a thermal flow simulation method for the design of electronic equipment. In the proposed sequence of analyses the first step is the estimation of heat generation rate from electric circuit. The method was applied to the thermal design of a new switch mode power supply (SMPS). The analysis was carried out using a computational fluid dynamics (CFD) code (Icepak: trademark of Fluent Inc.). In reducing the actual structural organizations of the printed circuit board (PCB) and the power semiconductor devices to simpler models the method of experimental design (MED) was employed. Following the prescription of MED the PCB was modeled as a simple plate having a thermal conductivity of epoxy resin. The power semiconductor devices were modeled by hexahedral resistance network. The heat sources are a field effect transistor (FET) and a diode, and computation of the power loss from them is described. The difference between measured and calculated temperatures on the power semiconductor devices was found to be within approximately 10 K.


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