In this paper, a variable gain amplifier (VGA) designed in 130 nm CMOS technology is presented. The proposed amplifier is based on the bulk-driven (BD) design approach, which brings a possibility to operate with low supply voltage. Since the supply voltage of only 0.6 V is used for the amplifier to operate, there is no risk of latch-up event that usually represents the main drawback of the BD circuit systems. BD transistors are employed in the input differential stage, which makes it possible to operate in rail-to-rail input voltage range. Achieved simulation results indicate that gain of the proposed VGA can be varied in a wide scale, which together with the low supply voltage feature make the proposed amplifier useful for low-voltage and low-power applications. An additional circuit responsible for maintaining the linear-in-decibel gain dependency of the VGA is also addressed. The proposed circuit block avails arbitrary shaping of the curve characterizing the gain versus the controlling voltage dependency.
Design of a Wideband Variable-Gain Amplifier With Self-Compensated Transistor for Accurate dB-Linear Characteristic in 65 nm CMOS Technology
