Tunnel oxide passivating electron contacts for high‐efficiency n‐type silicon solar cells with amorphous silicon passivating hole contacts

2019 ◽  
Vol 27 (12) ◽  
pp. 1104-1114 ◽  
Author(s):  
HyunJung Park ◽  
Youngseok Lee ◽  
Se Jin Park ◽  
Soohyun Bae ◽  
Sangho Kim ◽  
...  
2016 ◽  
Vol 6 (2) ◽  
pp. 419-425 ◽  
Author(s):  
Bernd Steinhauser ◽  
Mathias Kamp ◽  
Andreas A. Brand ◽  
Ulrich Jager ◽  
Jonas Bartsch ◽  
...  

1991 ◽  
Vol 30 (Part 1, No. 8) ◽  
pp. 1635-1640 ◽  
Author(s):  
Katsuhiko Higuchi ◽  
Katsuya Tabuchi ◽  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

1991 ◽  
Vol 23 (2-4) ◽  
pp. 227-238 ◽  
Author(s):  
Hisaki Tarui ◽  
Yasuo Kishi ◽  
Noboru Nakamura ◽  
Masato Nishikuni ◽  
Makoto Tanaka ◽  
...  

2012 ◽  
Vol 98 ◽  
pp. 277-282 ◽  
Author(s):  
Jung Y. Huang ◽  
Chien Y. Lin ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
Bau-Tong Dai

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


Nano Letters ◽  
2011 ◽  
Vol 12 (1) ◽  
pp. 440-445 ◽  
Author(s):  
Yang Wang ◽  
Tianyi Sun ◽  
Trilochan Paudel ◽  
Yi Zhang ◽  
Zhifeng Ren ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4983-4988 ◽  
Author(s):  
Baosheng Sang ◽  
Koji Dairiki ◽  
Akira Yamada ◽  
Makoto Konagai

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