In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as substrates to deposite HFCVD boron-doped diamond films with the same deposition parameters, using trimethyl borate as the dopant. FESEM, EDS, Raman spectroscopy and Rockwell hardness tester are used to characterize as-deposited boron-doped diamond (BDD) films. The FESEM micrographs exhibit that the film deposited on Si substrate presents the best uniformity and that on Ti substrate has smallest grain size and film thickness, with titanium element detected in the EDS spectra. Moreover, it’s speculated by indentation test that the adhesive strength between the BDD films and different substrates can be order as SiC>Ta>Ti for the different thermal expansion coefficient gaps between the substrate and diamond, and the hardness of the BDD coated samples measured using Rockwell hardness tester can also be order as SiC>Ta>Ti due to the different hardness of substrate materials. Finally, similar and representative characterization for BDD films is obtained from the Raman spectra for all the BDD films on different substrates.