Synthesis, Characterization of Elastic and Electrical Properties of Diamond-like BCx Nano-Phases Synthesized under High and Low Pressures

MRS Advances ◽  
2018 ◽  
Vol 3 (1-2) ◽  
pp. 45-52 ◽  
Author(s):  
Pavel V. Zinin ◽  
Alla V. Nozhkina ◽  
Roman I. Romanov ◽  
Vladimir P. Filonenko ◽  
Sergey A. Titov ◽  
...  
Keyword(s):  
High Pressure ◽  
Elastic Moduli ◽  
Diamond Films ◽  
Laser Deposition ◽  
Boron Doped Diamond ◽  
Chemical Sputtering ◽  
Boron Doped ◽  
High Pressure Sintering ◽  
Low Pressures

ABSTRACTThis paper presents experimental results on the synthesis of boron rich diamond-like carbon phases (BCx) obtained by high pressure sintering (s-BCx) and pulsed laser deposition (PLD-BCx). It has been shown that sintering of a mixture of a powder of micro-diamonds with a powder of boron in the toroid type high pressure device leads to the creation of s-BCx phase with a low resistivity, and high elastic moduli. The PLD-BCx film found to be rigid with the resistivity as low as that of best conductive boron–doped diamond films. It indicates that the presence of B atoms in a laser plasma leads to the formation of sp3 bonds in the material in the process of chemical sputtering. The combination of unique characteristics can be achieved by changing the ratio B/C.

Optical and electrical characterization of boron-doped diamond films

1995 ◽  
Vol 4 (5-6) ◽  
pp. 678-683 ◽  
Author(s):  
R. Locher ◽  
J. Wagner ◽  
F. Fuchs ◽  
M. Maier ◽  
P. Gonon ◽  
...  
Keyword(s):  
Diamond Films ◽  
Electrical Characterization ◽  
Boron Doped Diamond ◽  
Boron Doped

TL, OSL, Raman spectroscopy and SEM characterization of boron doped diamond films

2005 ◽  
Vol 202 (11) ◽  
pp. 2154-2159 ◽  
Author(s):  
M. Pedroza-Montero ◽  
V. Chernov ◽  
B. Castañeda ◽  
R. Meléndrez ◽  
J. A. N. Gonçalves ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Characterization of heavily boron-doped diamond films

1996 ◽  
Vol 5 (11) ◽  
pp. 1288-1294 ◽  
Author(s):  
R.J. Zhang ◽  
S.T. Lee ◽  
Y.W. Lam
Keyword(s):  
Diamond Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Deposition and Characterization of Boron-Doped HFCVD Diamond Films on Ti, SiC, Si and Ta Substrates

2012 ◽  
Vol 217-219 ◽  
pp. 1062-1067 ◽  
Author(s):  
Xin Chang Wang ◽  
Bin Shen ◽  
Fang Hong Sun
Keyword(s):  
Diamond Films ◽  
Indentation Test ◽  
Rockwell Hardness ◽  
Trimethyl Borate ◽  
Boron Doped Diamond ◽  
Hardness Tester ◽  
Boron Doped ◽  
Deposition Parameters ◽  
Fesem Micrographs

In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as substrates to deposite HFCVD boron-doped diamond films with the same deposition parameters, using trimethyl borate as the dopant. FESEM, EDS, Raman spectroscopy and Rockwell hardness tester are used to characterize as-deposited boron-doped diamond (BDD) films. The FESEM micrographs exhibit that the film deposited on Si substrate presents the best uniformity and that on Ti substrate has smallest grain size and film thickness, with titanium element detected in the EDS spectra. Moreover, it’s speculated by indentation test that the adhesive strength between the BDD films and different substrates can be order as SiC>Ta>Ti for the different thermal expansion coefficient gaps between the substrate and diamond, and the hardness of the BDD coated samples measured using Rockwell hardness tester can also be order as SiC>Ta>Ti due to the different hardness of substrate materials. Finally, similar and representative characterization for BDD films is obtained from the Raman spectra for all the BDD films on different substrates.

scholarly journals High-pressure synthesis and characterization of superconducting boron-doped diamond

2006 ◽  
Vol 7 (sup1) ◽  
pp. S2-S6 ◽  
Author(s):  
E.A. Ekimov ◽  
V.A. Sidorov ◽  
A.V. Rakhmanina ◽  
N.N. Mel’nik ◽  
R.A. Sadykov ◽  
...  
Keyword(s):  
High Pressure ◽  
Synthesis And Characterization ◽  
Boron Doped Diamond ◽  
High Pressure Synthesis ◽  
Boron Doped ◽  
Pressure Synthesis

scholarly journals High-pressure / High-temperature Synthesis and Characterization of Boron-doped Diamond

2006 ◽  
Vol 61 (12) ◽  
pp. 1561-1565 ◽  
Author(s):  
Natalia Dubrovinskaia ◽  
Leonid Dubrovinsky ◽  
Nobuyoshi Miyajima ◽  
Falko Langenhorst ◽  
Wilson A. Crichton ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
High Pressures ◽  
Direct Reaction ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
High Temperature Synthesis ◽  
High Pressure High Temperature

Bulk samples (with volumes up to ~ 7.5 mm3) of boron-doped diamonds (BDD) were synthesized by means of direct reaction between boron carbide and graphite in a multianvil apparatus at high pressures and high temperatures (HPHT). X-ray diffraction data revealed the presence in BDD of a very small amount of a highly boron-enriched phase (B50C2) and traces of the B13C2 used as an initial material. The absence of B50C2 in the product of treatment of pure B13C2 under the same HPHT conditions suggests that boron-rich carbides exsolute from diamond on quenching leading to boron depletion of the diamond matrix. These observations imply that boron solubility in diamond increases at high pressure and high temperature. This result may have important implications for the understanding of the mechanism of boron incorporation into diamond at HPHT synthesis and for the interpretation of the data on superconductivity of polycrystalline BDD.

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