Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

2017 ◽  
Vol 215 (10) ◽  
pp. 1700653 ◽  
Author(s):  
Filippo Giannazzo ◽  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Emanuela Schilirò ◽  
Ioannis Deretzis ◽  
...  
Keyword(s):  
High Frequency ◽  
Nitride Semiconductors ◽  
Vertical Transistors ◽  
Fabrication And Characterization

Fabrication and characterization of Ni1+x ZrxFe2−2xO4 nanoparticles for potential applications in high frequency devices

2016 ◽  
Vol 42 (14) ◽  
pp. 16359-16363 ◽  
Author(s):  
Muteeha Dilshad ◽  
Sidra Nazim ◽  
Muhammad Farooq Warsi ◽  
Muhammad Shahid ◽  
Shahzad Naseem ◽  
...  
Keyword(s):  
High Frequency ◽  
Potential Applications ◽  
High Frequency Devices ◽  
Fabrication And Characterization

Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Nishiguchi ◽  
X. Zhao ◽  
S. Oda
Keyword(s):  
Gas Phase ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Cold Electron ◽  
Very High Frequency ◽  
Electron Emitter ◽  
Fabrication And Characterization ◽  
Very High

AbstractA cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.

Fabrication and characterization of a high frequency and high coupling coefficient CMUT array

2016 ◽  
Vol 23 (10) ◽  
pp. 4965-4977 ◽  
Author(s):  
R. Manwar ◽  
T. Simpson ◽  
A. Bakhtazad ◽  
S. Chowdhury
Keyword(s):  
Coupling Coefficient ◽  
High Frequency ◽  
Fabrication And Characterization

scholarly journals Fabrication and Characterization of High-frequency Vibration Sensor over 6 kHz with Potential for Energy Harvesting

2021 ◽  
Vol 33 (6) ◽  
pp. 2073
Author(s):  
Lan Zhang ◽  
Ryohei Takei ◽  
Jian Lu ◽  
Daiji Noda ◽  
Ryo Ohta ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
High Frequency ◽  
Vibration Sensor ◽  
High Frequency Vibration ◽  
Fabrication And Characterization

Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: role of AlN buffer

2004 ◽  
Vol 447-448 ◽  
pp. 605-609 ◽  
Author(s):  
Jun-Phil Jung ◽  
Jin-Bock Lee ◽  
Jung-Sun Kim ◽  
Jin-Seok Park
Keyword(s):  
High Frequency ◽  
Fabrication And Characterization ◽  
Aln Buffer
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