scholarly journals Fabrication and characterization of annular-array, high-frequency, ultrasonic transducers based on PZT thick film

2014 ◽  
Vol 216 ◽  
pp. 207-213 ◽  
Author(s):  
D. Wang ◽  
E. Filoux ◽  
F. Levassort ◽  
M. Lethiecq ◽  
S.A. Rocks ◽  
...  
Ultrasonics ◽  
2006 ◽  
Vol 44 ◽  
pp. e711-e715 ◽  
Author(s):  
Q.Q. Zhang ◽  
F.T. Djuth ◽  
Q.F. Zhou ◽  
C.H. Hu ◽  
J.H. Cha ◽  
...  

2011 ◽  
Vol 21 (2) ◽  
pp. 159-163 ◽  
Author(s):  
Zhong-xia DUAN ◽  
Guo-qin YU ◽  
Jun-biao LIU ◽  
Jun LIU ◽  
Xiao-wen DONG ◽  
...  
Keyword(s):  

2012 ◽  
Vol 22 (9) ◽  
pp. 094007 ◽  
Author(s):  
R Xu ◽  
A Lei ◽  
C Dahl-Petersen ◽  
K Hansen ◽  
M Guizzetti ◽  
...  

Author(s):  
Tomasz Zawada ◽  
Louise Moller Bierregaard ◽  
Erling Ringgaard ◽  
Ruichao Xu ◽  
Michele Guizzetti ◽  
...  

2017 ◽  
Vol 215 (10) ◽  
pp. 1700653 ◽  
Author(s):  
Filippo Giannazzo ◽  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Emanuela Schilirò ◽  
Ioannis Deretzis ◽  
...  

2016 ◽  
Vol 42 (14) ◽  
pp. 16359-16363 ◽  
Author(s):  
Muteeha Dilshad ◽  
Sidra Nazim ◽  
Muhammad Farooq Warsi ◽  
Muhammad Shahid ◽  
Shahzad Naseem ◽  
...  

2000 ◽  
Vol 638 ◽  
Author(s):  
K. Nishiguchi ◽  
X. Zhao ◽  
S. Oda

AbstractA cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.


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