The Influence of Isothermal Annealing on the Resistivity of Amorphous Fe40Ni40B20 Thin Films

1987 ◽  
Vol 104 (2) ◽  
pp. 731-741 ◽  
Author(s):  
H. Ratajczak ◽  
I. Gościańska ◽  
A. Szlaferek
Keyword(s):  
Thin Films ◽  
Isothermal Annealing ◽  
Amorphous Fe40ni40b20

Epitaxial Growth of FeSi2 on (111)Si

1983 ◽  
Vol 25 ◽  
Author(s):  
H.C. Cheng ◽  
L.J. Chen ◽  
T.R. Your
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Silicon Substrate ◽  
Isothermal Annealing ◽  
Ion Beam ◽  
Interfacial Reactions ◽  
Ion Beam Mixing

ABSTRACTIsothermal annealing, two step annealing and ion beam mixing were performed to induce interfacial reactions between iron thin films and silicon substrate. Both orthorhombic and tetragonal FeSi2 were found to grow epitaxially on (lll)Si with orthorhombic FeSi2 being the predominant phase. No epitaxial growth of FeSi2 on (001)Si was detected. Epitaxial islands as large as 40 μm in size were formed by a scheme combining ion beam mixing and two step annealing.

Formation kinetics of PbZrxTi1−xO3 thin films

1994 ◽  
Vol 9 (7) ◽  
pp. 1728-1733 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Linear Growth ◽  
Isothermal Annealing ◽  
Effective Activation Energy ◽  
Perovskite Phase ◽  
Two Dimensions ◽  
Linear Growth Rate ◽  
Effective Activation ◽  
Formation Kinetics ◽  
Kinetics Of

The pyrochlore to perovskite transition in sputtered PZT thin films has been studied using SEM and XRD. The films were annealed in the temperature range between 350 °C and 750 °C, and the transition temperature for pyrochlore to perovskite transition was found to be around 525 °C. Isothermal annealing was used to study the nucleation and growth kinetics of the perovskite phase. The results showed a linear growth rate for the perovskite phase, thereby indicating an interface controlled process. Also, the growth was found to be isotropic in two dimensions parallel to the plane of the substrate. The nucleation of the perovskite phase was found to be random. The effective activation energy of the perovskite transition was found to be 494 kJ/mol using Avrami's approach.

The role of vacuum isothermal annealing in synthesis of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1098-1101 ◽  
Author(s):  
S. Chromik ◽  
M. Jergel ◽  
S. Benacka ◽  
F. Hanic ◽  
J. Liday
Keyword(s):  
Thin Films ◽  
Isothermal Annealing

Effect of Annealing on Coercive Field in Amorphous Fe40Ni40B20 Thin Films

1986 ◽  
Vol 96 (2) ◽  
pp. 563-571
Author(s):  
H. Ratajczak ◽  
I. Gościańska
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Amorphous Fe40ni40b20

In situ study of stress relaxation mechanisms of pure Al thin films during isothermal annealing

2006 ◽  
Vol 54 (11) ◽  
pp. 1841-1846 ◽  
Author(s):  
Soo-Jung Hwang ◽  
Yong-Duck Lee ◽  
Young-Bae Park ◽  
Je-Hun Lee ◽  
Chang-Oh Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Isothermal Annealing ◽  
In Situ Study
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