In situ study of stress relaxation mechanisms of pure Al thin films during isothermal annealing

2006 ◽  
Vol 54 (11) ◽  
pp. 1841-1846 ◽  
Author(s):  
Soo-Jung Hwang ◽  
Yong-Duck Lee ◽  
Young-Bae Park ◽  
Je-Hun Lee ◽  
Chang-Oh Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Isothermal Annealing ◽  
In Situ Study

In-situ Study on Effects of Annealing Temperature and Mo Interlayer on Stress Relaxation Behaviors of Pure Al Films on Glass Substrates

2006 ◽  
Vol 924 ◽  
Author(s):  
Young-Bae Park ◽  
Soo-Jung Hwang ◽  
Yong-Duk Lee ◽  
Ja-Young Jung ◽  
Young-Chang Joo
Keyword(s):  
Stress Relaxation ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Isothermal Annealing ◽  
Relaxation Mechanism ◽  
Glass Substrates ◽  
In Situ Study ◽  
Induced Stress ◽  
Measured Stress

ABSTRACTThe in-situ SEM observation of real-time hillock evolution in pure Al thin films on glass substrate during isothermal annealing at 194°C was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation and the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics

2018 ◽  
Vol 33 (8) ◽  
pp. 085001
Author(s):  
Atzin David Ruíz Pérez ◽  
M B de la Mora ◽  
J L Benítez ◽  
R Castañeda-Guzmán ◽  
Jorge Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Thermal Oxidation ◽  
Pulsed Laser ◽  
In Situ Study ◽  
Silicon Thin Films

scholarly journals In-Situ Study of Nb Oxide Thin Films Using Electron Energy Loss Spectroscopy

2011 ◽  
Vol 17 (S2) ◽  
pp. 798-799
Author(s):  
R Tao ◽  
R Klie ◽  
A Romanenko ◽  
L Cooley
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Oxide Thin Films ◽  
In Situ Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

scholarly journals In Situ Study of the Stress Relaxation During Aging of Nickel-Base Superalloy Forgings

2019 ◽  
Vol 50 (8) ◽  
pp. 3555-3565 ◽  
Author(s):  
P. E. Aba-Perea ◽  
P. J. Withers ◽  
T. Pirling ◽  
A. Paradowska ◽  
D. Ma ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Nickel Base Superalloy ◽  
In Situ Study ◽  
Nickel Base ◽  
Base Superalloy

In Situ Study of Order Formation in Mesoporous Titania Thin Films Templated by a Diblock Copolymer during Slot-Die Printing

2020 ◽  
Vol 12 (51) ◽  
pp. 57627-57637
Author(s):  
Nian Li ◽  
Wei Chen ◽  
Lin Song ◽  
Renjun Guo ◽  
Manuel A. Scheel ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymer ◽  
Mesoporous Titania ◽  
In Situ Study ◽  
Slot Die

In-Situ Study of the Crystallization of Amorphous CuInSe2 Thin Films and the Effect of InCl3 Treatment

2022 ◽  
pp. 139095
Author(s):  
Elizabeth Palmiotti ◽  
Benjamin Belfore ◽  
Deewakar Poudel ◽  
Sylvain Marsillac ◽  
Angus Rockett
Keyword(s):  
Thin Films ◽  
In Situ Study

Hexagonally organised mesoporous aluminium–oxo–hydroxide thin films prepared by the template approach. In situ study of the structural formation

2002 ◽  
Vol 12 (3) ◽  
pp. 557-564 ◽  
Author(s):  
Ludivine Pidol ◽  
David Grosso ◽  
Galo J. A. A. Soler-Illia ◽  
Eduardo L. Crepaldi ◽  
Clément Sanchez ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Formation ◽  
In Situ Study

In-situ study of Nb oxide and hydride on thin films using electron energy loss spectroscopy

2012 ◽  
Vol 18 (S2) ◽  
pp. 1624-1625
Author(s):  
R. Tao ◽  
R. Klie ◽  
A. Romanenko ◽  
L. Cooley
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
In Situ Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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