Interfacial reactions between impurities and slag onset of Si purification by slag addition

The interfacial reactions between impurities (Al and Ti) and slag onset of Si purification by 51 mol% SiO2–34 mol% CaO–15 mol% MgO slag addition were studied to enhance impurity removal efficiency from Si. The Al distribution behavior at the Si/Slag interface was investigated; a short reaction time (10 s) resulted in the formation of successive SiO2–CaO–MgO–Al2O3 layers in the slag with a thickness of 10 µm; increasing the reaction time (60 s) resulted in the entire ternary slag being changed into SiO2–CaO–MgO–Al2O3 quaternary slag due to the diffusion of Al2O3. It was shown that the highest impurity removal rate of Al could be achieved at the onset of the slag refining process. Based on the Ti distribution at the Si/slag interface, the slag refinement with 51 mol% SiO2–34 mol% CaO–15 mol% MgO had no effect on Ti removal.

Acid-base transport model of interfacial reactions for dynamic pH response quantification and regulation

The dynamic pH response resulting from acid-base transport of interfacial reactions greatly influences the kinetic performance and process mechanism, but its theoretical foundation is lacked. Herein, a generalized acid-base transport model is established owing to the success in deriving buffer transport equations and is experimentally through the relationships of buffer transport limiting current versus solution pH and buffer concentration (CB). The relationships bring forth the parameter determination methods of buffers with the superiority of facile survey of practical parameter values. Based on model calculations, the dynamic pH response is drawn as a j‒pH diagram to show the buffer transport law in the full pH range, highlighting the rate-limiting effect. The buffer operation principles are graphically presented as CB‒ΔpH diagrams to aid economic buffer applications. This study has laid the foundation for quantification and regulation of dynamic pH response and is of wide interest to the chemistry encompassing interfacial processes.