Raman scattering in CdHgTe epitaxial layers grown on CdZnTe substrates

2010 ◽  
Vol 7 (6) ◽  
pp. 1624-1626 ◽  
Author(s):  
A. I. Belogorokhov ◽  
N. A. Smirnova ◽  
I. A. Denisov ◽  
L. I. Belogorokhova ◽  
B. N. Levonovich
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers ◽  
Cdznte Substrates

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Mapping of CdZnTe substrates and CdHgTe epitaxial layers by X-ray diffraction

1997 ◽  
Vol 172 (1-2) ◽  
pp. 97-105 ◽  
Author(s):  
T. Skauli ◽  
T. Colin ◽  
S. Løvold
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cdznte Substrates

Raman scattering study of GaP:N epitaxial layers

1988 ◽  
Vol 49 (7) ◽  
pp. 797-805 ◽  
Author(s):  
V. Vorlíček ◽  
I. Gregora ◽  
V. Riede ◽  
H. Neumann
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers ◽  
Scattering Study

Raman scattering by surface polaritons in cubic GaN epitaxial layers

1997 ◽  
Vol 104 (7) ◽  
pp. 397-400 ◽  
Author(s):  
V.Yu. Davydov ◽  
A.V. Subashiev ◽  
T.S. Cheng ◽  
C.T. Foxon ◽  
I.N. Goncharuk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers ◽  
Surface Polaritons ◽  
Cubic Gan

Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering

1997 ◽  
Vol 36 (Part 1, No. 9A) ◽  
pp. 5525-5531 ◽  
Author(s):  
Hiroshi Harima ◽  
Shin-ichi Nakashima ◽  
John M. Carulli ◽  
Charles P. Beetz ◽  
Woo S. Yoo
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers

In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy

1993 ◽  
Vol 324 ◽  
Author(s):  
J. A. Roth ◽  
T. J. De Lyon ◽  
M. E. Adel
Keyword(s):  
Substrate Temperature ◽  
Temperature Measurement ◽  
Band Edge ◽  
Epitaxial Layers ◽  
Reflection Spectroscopy ◽  
Optical Interference ◽  
Cdznte Substrates

AbstractThe use of band-edge reflection spectroscopy (BRS) to determine the substrate temperature during MBE is reviewed. Data are presented for Si, GaAs, InP and CdZnTe substrates, and the use of BRS during the growth of ZnTe on Si is demonstrated. We discuss complications that arise due to optical interference in the epitaxial layers, and methods to compensate for the effects of interference are described.

The investigation of structural perfection of CdxHg1−x Te/CdZnTe epitaxial layers by the Raman scattering method

2004 ◽  
Vol 38 (1) ◽  
pp. 82-90 ◽  
Author(s):  
A. I. Belogorokhov ◽  
I. A. Denisov ◽  
N. A. Smirnova ◽  
L. I. Belogorokhova
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers ◽  
Scattering Method ◽  
Structural Perfection

Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering

1999 ◽  
Vol 75 (23) ◽  
pp. 3602-3604 ◽  
Author(s):  
E. Silveira ◽  
A. Tabata ◽  
J. R. Leite ◽  
R. Trentin ◽  
V. Lemos ◽  
...  
Keyword(s):  
Phase Separation ◽  
Raman Scattering ◽  
Epitaxial Layers ◽  
Resonant Raman ◽  
Resonant Raman Scattering

scholarly journals Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

2013 ◽  
Vol 114 (19) ◽  
pp. 193516 ◽  
Author(s):  
J. A. Steele ◽  
R. A. Lewis ◽  
M. Henini ◽  
O. M. Lemine ◽  
A. Alkaoud
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers ◽  
Strain Effects

Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers

2004 ◽  
Vol 241 (12) ◽  
pp. 2693-2697 ◽  
Author(s):  
K. T. Liu ◽  
Y. K. Su ◽  
S. J. Chang ◽  
K. Onomitsu ◽  
Y. Horikoshi
Keyword(s):  
Raman Scattering ◽  
Epitaxial Layers
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