Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

Epitaxial group-III nitride films, although in single crystalline form, contain still a large number of threading dislocations. These set limits to performance and lifetime of devices, notably to high power structures like lasers. The strategy in material development was and will be (at least until lattice-matched substrates become available) to reduce the dislocation densities. The present contribution elaborates on possible dislocation origination mechanisms that determine the population of dislocations in the epitaxial layers. These mechanisms can be controlled to a certain degree by proper deposition procedures. The achieved dislocation populations then determine the processes that can reduce the dislocation densities during growth of the epitaxial layers. The mutual annihilation of threading dislocations is rather efficient although affected by the glide properties of the growing epitaxial crystal and the thermal stresses during the cooling down after growth.

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Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.5525 ◽

1997 ◽

Vol 36 (Part 1, No. 9A) ◽

pp. 5525-5531 ◽

Cited By ~ 13

Author(s):

Hiroshi Harima ◽

Shin-ichi Nakashima ◽

John M. Carulli ◽

Charles P. Beetz ◽

Woo S. Yoo

Keyword(s):

Raman Scattering ◽

Epitaxial Layers

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Characterization of Metal/A1xIn1-xN Interface Thermal Stability and Electrical Properties

MRS Proceedings ◽

10.1557/proc-449-1073 ◽

1996 ◽

Vol 449 ◽

Author(s):

Guohua Qiu ◽

Fen Chen ◽

J. O. Olowolafe ◽

C. P. Swann ◽

K. M. Unruh ◽

...

Keyword(s):

Thermal Stability ◽

Specific Contact Resistance ◽

Nitride Semiconductors ◽

Group Iii ◽

Line Measurement ◽

Solid State Devices ◽

Specific Contact ◽

Group Iii Nitride ◽

The Moment

ABSTRACTThe interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride semiconductors are very rare. In this study, linear I-V characteristics of titanium and aluminum to A1xIn1-xN of three different composition (x=0.18, 0.50,0.85) were obtained exhibiting ohmic characteristics. Specific contact resistance of these metals to A1.18In.82N and Al.5In.5N was measured by transmission line measurement. Interdiffusion between the metals and the semiconductors, induced by annealing in N2 ambient, was determined using RBS and thermal stability was evaluated.

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Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00041-0 ◽

1995 ◽

Vol 152 (3) ◽

pp. 135-142 ◽

Cited By ~ 53

Author(s):

D. Chandrasekhar ◽

David J. Smith ◽

S. Strite ◽

M.E. Lin ◽

H. Morkoç

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Nitride Semiconductors ◽

Group Iii ◽

Resolution Electron ◽

Group Iii Nitride

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Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

Crystal Research and Technology ◽

10.1002/crat.200800144 ◽

2008 ◽

Vol 43 (10) ◽

pp. 1091-1096 ◽

Cited By ~ 3

Author(s):

M. R. Islam ◽

N. F. Chen ◽

M. Yamada

Keyword(s):

Raman Scattering ◽

Epitaxial Layers

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Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific Reports ◽

10.1038/s41598-020-71590-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Hwan-Seop Yeo ◽

Kwanjae Lee ◽

Young Chul Sim ◽

Seoung-Hwan Park ◽

Yong-Hoon Cho

Keyword(s):

Quantum Wire ◽

Quantum Wires ◽

Geometrical Shape ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Single Quantum ◽

Group Iii ◽

Highly Efficient ◽

Group Iii Nitride ◽

Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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