PEDOT:PSS/SiNWs Hybrid Solar Cells With an Effective Nanocrystalline Silicon Back Surface Field Layer by Low Temperature Catalytic Diffusion

Solar RRL ◽  
2017 ◽  
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Ming Liu ◽  
Yurong Zhou ◽  
Fengchao Li ◽  
Huamei Wang ◽  
...  
2017 ◽  
Vol 110 (13) ◽  
pp. 133504 ◽  
Author(s):  
Bingbing Chen ◽  
Jianhui Chen ◽  
Yanjiao Shen ◽  
Kunpeng Ge ◽  
Jianxin Guo ◽  
...  

2008 ◽  
Vol 516 (20) ◽  
pp. 6782-6785 ◽  
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D. Muñoz ◽  
C. Voz ◽  
I. Martin ◽  
A. Orpella ◽  
R. Alcubilla ◽  
...  

2016 ◽  
Vol 11 (1) ◽  
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Yiling Sun ◽  
Zhenhai Yang ◽  
Pingqi Gao ◽  
Jian He ◽  
Xi Yang ◽  
...  

Solar Energy ◽  
2018 ◽  
Vol 162 ◽  
pp. 397-402 ◽  
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Kunpeng Ge ◽  
Jianhui Chen ◽  
Bingbing Chen ◽  
Yanjiao Shen ◽  
Jianxin Guo ◽  
...  

2003 ◽  
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...  

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Wenchang Yeh ◽  
Hikaru Moriyama

Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs) was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE) of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV) light when the p+ layer was thinner than 30 nm. At near infrared (NIR), extra increment on IQE was achieved by rear n+ back surface field (BSF) layer with a thickness thinner than 100 nm.


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