scholarly journals Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

2008 ◽  
Vol 516 (20) ◽  
pp. 6782-6785 ◽  
Author(s):  
D. Muñoz ◽  
C. Voz ◽  
I. Martin ◽  
A. Orpella ◽  
R. Alcubilla ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Back Surface ◽  
Hot Wire ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Surface Field

scholarly journals Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Back Surface ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Interface Defects ◽  
Surface Field ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.

PEDOT:PSS/SiNWs Hybrid Solar Cells With an Effective Nanocrystalline Silicon Back Surface Field Layer by Low Temperature Catalytic Diffusion

Solar RRL ◽  
2017 ◽  
Vol 1 (11) ◽  
pp. 1700133 ◽  
Author(s):  
Rongzong Shen ◽  
Ming Liu ◽  
Yurong Zhou ◽  
Fengchao Li ◽  
Huamei Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Nanocrystalline Silicon ◽  
Back Surface ◽  
Hybrid Solar Cells ◽  
Back Surface Field ◽  
Field Layer ◽  
Surface Field

scholarly journals Optimizing polymorphous silicon back surface field of a-Si(n)/c-Si(p) heterojunction solar cells by simulation

2008 ◽  
Vol 57 (5) ◽  
pp. 3212
Author(s):  
Zhao Lei ◽  
Zhou Chun-Lan ◽  
Li Hai-Ling ◽  
Diao Hong-Wei ◽  
Wang Wen-Jing
Keyword(s):  
Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Surface Field

Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+Back-Surface-Field Structure

2003 ◽  
Vol 42 (Part 1, No. 9A) ◽  
pp. 5397-5404 ◽  
Author(s):  
Toshio Joge ◽  
Ichiro Araki ◽  
Tsuyoshi Uematsu ◽  
Terunori Warabisako ◽  
Hiroshi Nakashima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Carrier Lifetime ◽  
Field Structure ◽  
Silicon Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field

scholarly journals Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Wenchang Yeh ◽  
Hikaru Moriyama
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Near Infrared ◽  
Uv Light ◽  
Internal Quantum Efficiency ◽  
Back Surface ◽  
Back Surface Field ◽  
Si Solar Cells ◽  
Surface Field ◽  
Heavily Doped

Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs) was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE) of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV) light when the p+ layer was thinner than 30 nm. At near infrared (NIR), extra increment on IQE was achieved by rear n+ back surface field (BSF) layer with a thickness thinner than 100 nm.

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