Interface Engineering via Sputtered Oxygenated CdS:O Window Layer for Highly Efficient Sb 2 Se 3 Thin‐Film Solar Cells with Efficiency Above 7%

Solar RRL ◽  
2019 ◽  
Vol 3 (10) ◽  
pp. 1900225 ◽  
Author(s):  
Liping Guo ◽  
Baiyu Zhang ◽  
Smriti Ranjit ◽  
Jacob Wall ◽  
Swapnil Saurav ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Interface Engineering ◽  
Highly Efficient

Surface and interface engineering for highly efficient Cu2ZnSnSe4 thin-film solar cells via in situ formed ZnSe nanoparticles

2021 ◽  
Author(s):  
Hyesun Yoo ◽  
Jongsung Park ◽  
Mahesh P. Suryawanshi ◽  
Jiwon Lee ◽  
JunHo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Interface Engineering ◽  
Znse Nanoparticles ◽  
Surface And Interface ◽  
Highly Efficient ◽  
Device Efficiency

In situ formed ZnSe NPs on the surface of CZTSe offer surface and interface engineering and provide a favourable band alignment between CZTSe and CdS leading to an improved device efficiency of 10.49%.

scholarly journals Author Correction: Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maximilian Krause ◽  
Aleksandra Nikolaeva ◽  
Matthias Maiberg ◽  
Philip Jackson ◽  
Dimitrios Hariskos ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Highly Efficient

Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

2013 ◽  
Vol 103 (7) ◽  
pp. 073903 ◽  
Author(s):  
Hyung Hwan Jung ◽  
Jung-Dae Kwon ◽  
Sunghun Lee ◽  
Chang Su Kim ◽  
Kee-Seok Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vanadium Pentoxide ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Silicon Thin Film ◽  
Free Silicon

CdS nanowire layers of enhanced transmittance for window layer applications in thin film solar cells

2012 ◽  
Author(s):  
Hongmei Dang ◽  
Suresh Rajaputra ◽  
Jianhao Chen ◽  
Sai Guduru ◽  
Nandu Reddy ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cds Nanowire

scholarly journals Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells: erratum

2017 ◽  
Vol 25 (24) ◽  
pp. A1053
Author(s):  
Jin Hou ◽  
Wei Hong ◽  
Xiaohang Li ◽  
Chunyong Yang ◽  
Shaoping Chen
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Highly Efficient

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

scholarly journals Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparentμc-SiOx:H Doped Layers inμc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Pei-Ling Chen ◽  
Po-Wei Chen ◽  
Min-Wen Hsiao ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Spectral Response ◽  
Wavelength Region ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Efficiency Gain ◽  
Silicon Thin Film ◽  
Single Junction ◽  
Wide Range

The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-typeμc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties ofμc-SiOx:H films were also discussed. Regarding the dopedμc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventionalμc-Si:H(p) as window layer inμc-Si:H single-junction solar cells, the application ofμc-SiOx:H(p) increased theVOCand led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment ofμc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) ofμc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-typeμc-SiOx:H films achieved aVOCof 1.37 V,JSCof 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%.

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