device efficiency
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Author(s):  
Yaxing Zhang ◽  
Yuanyuan Zheng ◽  
Changsheng Shi ◽  
Jinyan Zhang ◽  
Tao Wang ◽  
...  

The progress of orange-red thermally activated delayed fluorescence (TADF) emitters for solution-processed organic light-emitting diodes (OLEDs) is still lagged behind blue and green materials in terms of device efficiency. In...


Author(s):  
Jie Min ◽  
Qiang Wu ◽  
Wei Wang ◽  
Zeng Chen ◽  
Xinxin Xia ◽  
...  

In spite of the great success of all-polymer solar cells (all-PSCs) in terms of device efficiency mainly owing to the vigorous development of polymer donors (PDs) and polymer acceptors (PAs),...


Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 84
Author(s):  
Anna Maria Ferretti ◽  
Marianna Diterlizzi ◽  
William Porzio ◽  
Umberto Giovanella ◽  
Lucia Ganzer ◽  
...  

The use of water-processable nanoparticles (WPNPs) is an emerging strategy for the processing of organic semiconducting materials into aqueous medium, dramatically reducing the use of chlorinated solvents and enabling the control of the nanomorphology in OPV active layers. We studied amphiphilic rod-coil block copolymers (BCPs) with a different chemical structure and length of the hydrophilic coil blocks. Using the BCPs blended with a fullerene acceptor material, we fabricated NP-OPV devices with a sustainable approach. The goal of this work is to clarify how the morphology of the nanodomains of the two active materials is addressed by the hydrophilic coil molecular structures, and in turn how the design of the materials affects the device performances. Exploiting a peculiar application of TEM, EFTEM microscopy on WPNPs, with the contribution of AFM and spectroscopic techniques, we correlate the coil structure with the device performances, demonstrating the pivotal influence of the chemical design over material properties. BCP5, bearing a coil block of five repeating units of 4-vinilpyridine (4VP), leads to working devices with efficiency comparable to the solution-processed ones for the multiple PCBM-rich cores morphology displayed by the blend WPNPs. Otherwise, BCP2 and BCP15, with 2 and 15 repeating units of 4VP, respectively, show a single large PCBM-rich core; the insertion of styrene units into the coil block of BCP100 is detrimental for the device efficiency, even if it produces an intermixed structure.


2021 ◽  
pp. 2101791
Author(s):  
Chih‐Lun Yi ◽  
Chun‐Yen Lin ◽  
Yukun Tang ◽  
Chun‐Yu Wang ◽  
Chih‐Wei Huang ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2290
Author(s):  
Sajid Hussain ◽  
Fawad Saeed ◽  
Ahmad Raza ◽  
Abida Parveen ◽  
Ali Asghar ◽  
...  

CdSe/ZnS quantum dots (QDs) have attracted great consideration from investigators owing to their excellent photo-physical characteristics and application in quantum dot light-emitting diodes (QD-LEDs). The CdSe/ZnS-based inverted QD-LEDs structure uses high-quality semiconductors electron transport layers (ETLs), a multilayered hole transporting layers (HTLs). In QD-LED, designing a device structure with a minimum energy barrier between adjacent layers is very important to achieve high efficiency. A high mobility polymer of poly (9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine (TFB) was doped with 4,4′-bis-(carbazole-9-yl) biphenyl (CBP) with deep energy level to produce composite TFB:CBP holes to solve energy mismatch (HTL). In addition, we also improved the QD-LED device structure by using zinc tin oxide (ZTO) as ETL to improve device efficiency. The device turn-on voltage Vt (1 cd m−2) with ZTO ETL reduced from 2.4 V to 1.9 V significantly. Furthermore, invert structure devices exhibit luminance of 4296 cd m−2, current-efficiency (CE) of 7.36 cd A−1, and external-quantum efficiency (EQE) of 3.97%. For the QD-LED based on ZTO, the device efficiency is improved by 1.7 times.


2021 ◽  
Author(s):  
Rinku Rani Das ◽  
Atanu Chowdhury ◽  
Apurba Chakroborty ◽  
Santanu Maity

Abstract Multiple Fins structured FinFET (M-FinFET) is a promising semiconductor device for future improvisation of CMOS technology. In this paper, we investigate the impact of interface trap charges (positive and negative trap) at the HfO2/Si interface in M-FinFET for the first time. The various important DC attributes, RF/analog, and linearity metrics are studied in presence and absence of traps. Simultaneously, the various trap concentration effect on the characteristics of M-FinFET are also observed. The results show that the introduction of interface trap charges (ITC) has optimized the ON current, OFF current, and also improves sub-threshold swing (SS) characteristics as compared to no trap condition. It is observed that positive trap having trap concentration of 1012/cm2 enhances the ION ~5.14x, SS by 44.75%, and various important RF/analog parameter such as transconductance (Gm) improves by a factor 5, device efficiency by 7.4% and intrinsic gain (Av) 80.4%. On the other hand, linearity parameters like VIP2, VIP3 and 1 dB compression point show better performance in presence of positive and negative trap.


2021 ◽  
Vol 27 (S1) ◽  
pp. 390-392
Author(s):  
Christina Harreiss ◽  
Mingjian Wu ◽  
Stefan Langner ◽  
Stefanie Rechberger ◽  
Johannes Will ◽  
...  

2021 ◽  
Author(s):  
Yangbo Wu ◽  
Yuming Zhang ◽  
Chunhao Ran ◽  
Jingbo Lan ◽  
Zhengyang Bin ◽  
...  

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