Progress in Light Emission from Silicon Nanostructures

2006 ◽  
pp. 97-114 ◽  
Author(s):  
David J. Lockwood
Keyword(s):  
Light Emission ◽  
Silicon Nanostructures

Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

1995 ◽  
Vol 190 (1) ◽  
pp. 91-95 ◽  
Author(s):  
A. G. Nassiopoulos ◽  
S. Grigoropoulos ◽  
D. Papadimitriou ◽  
E. Gocolides
Keyword(s):  
Light Emission ◽  
Reactive Ion Etching ◽  
Silicon Nanostructures ◽  
Ion Etching

Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion Implantation

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Komoda ◽  
J.P. Kelly ◽  
A. Nejm ◽  
K.P. Homewood ◽  
P.L.F Hemment ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Two Phase ◽  
Population Distributions ◽  
Si Nanocrystals ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Si Ion Implantation

ABSTRACTImplantation of Si+ ions into thermal oxides grown on silicon has been used to synthesise a two phase structure consisting of Si nanocrystals in a SiO2 matrix. Various processing conditions have been used in order to modify the size and population distributions of the Si inclusions. Photoluminescence spectra have been recorded from samples annealed in nitrogen, forming gas and oxygen. Both red and blue shifts of the luminescence peaks have been observed. It is concluded that the photoluminescence is a consequence of the effects of quantum confinement but is also dependent on the presence of irradiation-induced defects or Si/SiO2 interface states.

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

Chapter 9 Light Emission from Silicon-Based Materials: From Silicon Nanostructures to Rare Earth Ions

2016 ◽  
pp. 241-280
Author(s):  
Fabio Iaconaa ◽  
Maria Miritelloa ◽  
Simona Boninellib ◽  
Gabriele Bellocchia, b ◽  
Alessia Irrerac ◽  
...  
Keyword(s):  
Rare Earth ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Silicon Nanostructures ◽  
Silicon Based

Visible Light Emission from Silicon Nanostructures

1999 ◽  
Vol 215 (1) ◽  
pp. 297-300
Author(s):  
D.J. Lockwood ◽  
B.T. Sullivan ◽  
P. Schmuki ◽  
L.E. Erickson
Keyword(s):  
Visible Light ◽  
Light Emission ◽  
Silicon Nanostructures ◽  
Visible Light Emission
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