Zinc silicon arsenide (ZnSiAs2) crystal structure, lattice parameters, thermal conductivity, Debye temperature, melting point

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_425 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Conductivity ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Temperature Melting

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Zinc germanium phosphide (ZnGeP2) crystal structure, lattice parameters, thermal expansion, Debye temperature, melting point, thermal conductivity, hardness

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_435 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Conductivity ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Zinc Germanium Phosphide ◽

Temperature Melting

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Zinc tin arsenide (ZnSnAs2) crystal structure, lattice parameters, Debye temperature, melting point, hardness

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_454 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Crystal Structure ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Temperature Melting

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Copper indium sulfide (roquesite, CuInS2) crystal structure, lattice parameters, Debye temperature, melting point, mechanical properties

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_99 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Crystal Structure ◽

Mechanical Properties ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Indium Sulfide ◽

Copper Indium ◽

Temperature Melting

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Copper gallium sulfide (CuGaS2) crystal structure, heat capacity, lattice parameters, thermal expansion and conductivity, Debye temperature, melting point

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_73 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Crystal Structure ◽

Heat Capacity ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Gallium Sulfide ◽

Temperature Melting

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Copper gallium telluride (CuGaTe2) crystal structure, lattice parameters, Debye temperature, melting point, thermal expansion and conductivity

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_94 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Gallium Telluride ◽

Temperature Melting

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Cadmium tin arsenide (CdSnAs2) crystal structure, lattice parameters, thermal expansion, Debye temperature, melting point, compressibility

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_503 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Temperature Melting

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Copper indium telluride (CuInTe2) crystal structure, lattice parameters, thermal expansion, Debye temperature, melting point and related parameters

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_114 ◽

2005 ◽

pp. 1-6

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Copper Indium ◽

Indium Telluride ◽

Temperature Melting

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Silver gallium sulfide (AgGaS2) crystal structure, lattice parameters, Debye temperature, melting point and related lattice properties

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_121 ◽

2005 ◽

pp. 1-6

Author(s):

Keyword(s):

Crystal Structure ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Gallium Sulfide ◽

Temperature Melting

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Cadmium germanium arsenide (CdGeAs2) crystal structure, lattice parameters, thermal expansion, Debye temperature, melting point, heat capacity, hardnes, internal friction

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_486 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Crystal Structure ◽

Heat Capacity ◽

Thermal Expansion ◽

Melting Point ◽

Internal Friction ◽

Debye Temperature ◽

Lattice Parameters ◽

Cadmium Germanium Arsenide ◽

Temperature Melting

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Zinc silicon phosphide (ZnSiP2) crystal structure, lattice parameters, thermal expansion, Debye temperature, melting point, hardness

Landolt-Börnstein - Group III Condensed Matter - Ternary Compounds, Organic Semiconductors ◽

10.1007/10717201_417 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Crystal Structure ◽

Thermal Expansion ◽

Melting Point ◽

Debye Temperature ◽

Lattice Parameters ◽

Zinc Silicon Phosphide ◽

Temperature Melting

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