Green synthesis of silver indium telluride nanocrystals: characterization and photothermal analysis

Here, we report the preparation and characterization of stable AgIn5Te8 (AITe) nanocrystals (NCs) and respective AITe-ZnS and AITe-ZnSe alloys. A green route of synthesis is described by using an aqueous...

Predicted high thermoelectric performance in a two-dimensional indium telluride monolayer and its dependence on strain

Group IIIA–VIA monolayers are predicted to exhibit high thermoelectric performance, owing to their low thermal conductance and unique band structures.

Effect of Annealing and Substrate Temperatures on the Structural Properties of In2Te3 Thin Films

Indium telluride (In2Te3) thin films were synthesized on glass substrates using thermal evaporation method under the vacuum of the order of 10−6 torr. The role of annealing and substrate temperatures on the growth of In2Te3 thin films was investigated. The structure, surface morphology, and composition of films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDAX), respectively. The as-deposited films at substrate temperature 25 °C and 150 °C were found to be non-stoichiometric. The films deposited at 150 °C substrate temperature and post-annealed at 300 °C for 1 h were stoichiometric in composition and the XRD analysis revealed that these films were cubic in nature with preferred orientation along (5 1 1) plane. The electrical studies revealed that the films were p-type in nature. In addition, the resistivity and optical band gap of optimized films found to be 33 × 10−2 Ω-cm and 0.99 eV, respectively.

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

Growing of Mercury-Indium Telluride Perfect Single Crystals

The perfect single crystals of mercury-indium telluride were grown by the modified method of zone melting. The differential thermal analysis (DTA) and X-ray structure analysis are performed.