Negative Ion Resonance Electron Scattering from Oriented, Physisorbed O2

1988 ◽  
pp. 123-130
Author(s):  
R. E. Palmer ◽  
P. J. Rous ◽  
R. F. Willis
Keyword(s):  
Electron Scattering ◽  
Negative Ion ◽  
Resonance Electron

scholarly journals Role of Negative Ion Resonances in Electron Scattering from Atoms and Molecules

1999 ◽  
Vol 52 (3) ◽  
pp. 473 ◽  
Author(s):  
S. J. Buckman ◽  
D. T. Alle ◽  
M. J. Brennan ◽  
P. D. Burrow ◽  
J. C. Gibson ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Cross Sections ◽  
Negative Ions ◽  
Negative Ion ◽  
Electron Correlations ◽  
Molecular Systems ◽  
Atoms And Molecules ◽  
Wide Range ◽  
Scattering Cross Sections

Transient negative ions (resonances) formed during the collision of an electron with an atom or molecule have been extensively studied for over thirty years. The continued interest in these states, both experimentally and theoretically, stems from the profound effects that they can have on electron scattering cross sections and the role that electron–electron correlations play in their formation and quasi-stability. A selective discussion of examples of such resonances, involving one, two and three excited electrons is given for a wide range of atomic and molecular systems.

Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

2014 ◽  
Vol 22 (4) ◽  
Author(s):  
L. Karachevtseva ◽  
Yu. Goltviansky ◽  
O. Kolesnyk ◽  
O. Lytvynenko ◽  
O. Stronska
Keyword(s):  
Electron Scattering ◽  
Stark Effect ◽  
Oscillation Amplitude ◽  
Level Energy ◽  
Ir Absorption ◽  
Macroporous Silicon ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Silicon Structures ◽  
Resonance Electron

AbstractWe investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.

Resonance electron scattering by adsorbed molecules: resonance energy versus bond length

1993 ◽  
Vol 287-288 ◽  
pp. A375
Author(s):  
L. Sǐller ◽  
K.M. Hock ◽  
R.E. Palmer ◽  
J.F. Wendelken
Keyword(s):  
Bond Length ◽  
Electron Scattering ◽  
Resonance Energy ◽  
Adsorbed Molecules ◽  
Resonance Electron

Non-resonance electron scattering in the field of two plane light waves

1994 ◽  
Vol 50 (4) ◽  
pp. 339-342 ◽  
Author(s):  
O I Denisenko ◽  
S P Roshchupkin
Keyword(s):  
Electron Scattering ◽  
Light Waves ◽  
Plane Light ◽  
Resonance Electron
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