MOCVD-Growth, Characterization and Application of III-V Semiconductor Strained Heterostructures

NATO ASI Series - Optical Properties of Narrow-Gap Low-Dimensional Structures ◽

10.1007/978-1-4613-1879-8_4 ◽

1987 ◽

pp. 39-53

Author(s):

M. Razeghi ◽

P. Maurel ◽

F. Omnes ◽

E. Thörngren

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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InP–InP System: MOCVD Growth, Characterization, and Applications

The MOCVD Challenge ◽

10.1201/9781439807002-15 ◽

2010 ◽

pp. 435-472

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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MOCVD growth, characterization and stability of high quality InGaN MQW structures

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ◽

10.1109/leosst.1997.619245 ◽

2002 ◽

Author(s):

J.C. Ramer ◽

S.D. Hersee

Keyword(s):

High Quality ◽

Mocvd Growth ◽

Growth Characterization

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GaInAsP–InP System: MOCVD Growth, Characterization, and Applications

The MOCVD Challenge ◽

10.1201/9781439807002-17 ◽

2010 ◽

pp. 565-660

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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GaInAs–InP System: MOCVD Growth, Characterization, and Applications

The MOCVD Challenge ◽

10.1201/9781439807002-16 ◽

2010 ◽

pp. 473-564

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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Strained Heterostructures: MOCVD Growth, Characterization, and Applications

The MOCVD Challenge ◽

10.1201/9781439807002-18 ◽

2010 ◽

pp. 661-688

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material

Semiconductors and Semimetals ◽

10.1016/s0080-8784(08)62558-2 ◽

1990 ◽

pp. 243-355 ◽

Author(s):

Manijeh Razeghi

Keyword(s):

Mocvd Growth ◽

Growth Characterization

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Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00620-9 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 1228-1231

Author(s):

K Matsushita

Keyword(s):

Carrier Concentration ◽

Annealing Process ◽

Mocvd Growth ◽

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GROWTH CHARACTERIZATION OF a Si:H FILMS BY MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19831052 ◽

1983 ◽

Vol 44 (C10) ◽

pp. C10-247-C10-251

Author(s):

J. Perrin ◽

B. Drevillon

Keyword(s):

Spectroscopic Ellipsometry ◽

Angle Of Incidence ◽

Growth Characterization

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MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures

MRS Proceedings ◽

10.1557/proc-0892-ff31-01 ◽

2005 ◽

Vol 892 ◽

Author(s):

Jung Han ◽

K Kim ◽

Jie Su ◽

Maria Gherasimova ◽

Arto Nurmikko ◽

...

Keyword(s):

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MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

10.21236/ada198421 ◽

1987 ◽

Author(s):

Jean-Pierre Faurie

Keyword(s):

Electronic Device ◽

Growth Characterization ◽

Device Processing

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