GROWTH CHARACTERIZATION OF a Si:H FILMS BY MULTIPLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-247-C10-251
Author(s):  
J. Perrin ◽  
B. Drevillon
1990 ◽  
Vol 209 ◽  
Author(s):  
M.G. Doss ◽  
D. Chandler-Horowitz ◽  
J. F. Marchiando ◽  
S. Krause ◽  
S. Seraphin

ABSTRACTSamples of SIMOX have been prepared by implantation in a high-current implanter (density ≍ 1 mA/cm2) and by annealing at 1300°C for 6 hours. Transmission electron microscopy reveals unusual structure in these samples. Spectroscopic ellipsometry has been used to analyze these structures. Ellipsometric measurements were collected at an angle of incidence of 75. deg, with photon energies from 1.5 to 5.0 eV, and using a rotating polarizer configuration. The measurements were analyzed with three models: a three-layer model, a four-layer model, and a five-layer model. The five-layer model provided the best fit of the three. This model identified a layer of crystalline Si inclusions (“islands”) within the SiO2 layer. A method is presented that provides initial estimates for the thicknesses of the top three layers to help start the regression analysis.


2000 ◽  
Vol 338-342 ◽  
pp. 575-578 ◽  
Author(s):  
O.P. Alexander Lindquist ◽  
H. Arwin ◽  
Urban Forsberg ◽  
Peder Bergman ◽  
K. Järrendahl

2021 ◽  
Vol 717 (1) ◽  
pp. 92-97
Author(s):  
O. S. Kondratenko ◽  
S. V. Mamykin ◽  
T. S. Lunko ◽  
I. B. Mamontova ◽  
V. R. Romanyuk

2011 ◽  
Vol 5 (S8) ◽  
Author(s):  
Christoph Heinrich ◽  
Timo Wolf ◽  
Christina Kropp ◽  
Stefan Northoff ◽  
Thomas Noll

2014 ◽  
Vol 571 ◽  
pp. 756-761 ◽  
Author(s):  
Daisuke Murata ◽  
Tetsuya Yuguchi ◽  
Hiroyuki Fujiwara

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