Comparative Study of High Power Devices in Converter Circuits

Power Semiconductor Devices and Circuits ◽

10.1007/978-1-4615-3322-1_8 ◽

1992 ◽

pp. 197-238

Author(s):

H.-Ch. Skudelny ◽

A. Mertens ◽

J.-G. Langer

Keyword(s):

Comparative Study ◽

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Combined Density Functional Theory and Microkinetics Study to Predict Optimum Operating Conditions of Si(100) Surface Carbonization by Acetylene for High Power Devices

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.1c01044 ◽

2021 ◽

pp. 4558-4568

Author(s):

Santhanamoorthi Nachimuthu ◽

Tsung-Ruei Chen ◽

Chen-Hao Yeh ◽

Lu-Sheng Hong ◽

Jyh-Chiang Jiang

Keyword(s):

Density Functional Theory ◽

Density Functional ◽

Operating Conditions ◽

Optimum Operating ◽

Power Devices ◽

Functional Theory

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Effect of carrier lifetime on the forward characteristics of high-power devices

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1970.17051 ◽

1970 ◽

Vol 17 (9) ◽

pp. 647-652 ◽

Author(s):

Seok Cheow Choo

Keyword(s):

Carrier Lifetime ◽

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Virtual testing of high power devices at the rim of the safe operating area and beyond

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2014.6855963 ◽

2014 ◽

Author(s):

Gerhard Wachutka

Keyword(s):

Power Devices ◽

Virtual Testing ◽

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Silicon carbide high-power devices

IEEE Transactions on Electron Devices ◽

10.1109/16.536819 ◽

1996 ◽

Vol 43 (10) ◽

pp. 1732-1741 ◽

Author(s):

C.E. Weitzel ◽

J.W. Palmour ◽

C.H. Carter ◽

K. Moore ◽

K.K. Nordquist ◽

...

Keyword(s):

Silicon Carbide ◽

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A compact TM01 mode combiner for phase locked high power devices

2015 IEEE International Vacuum Electronics Conference (IVEC) ◽

10.1109/ivec.2015.7223823 ◽

2015 ◽

Author(s):

Jiawei Li ◽

Wenhua Huang ◽

Renzhen Xiao ◽

Yuchuan Zhang ◽

Tiezhu Liang ◽

...

Keyword(s):

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Effect of the Thickness of nickel film interlayer on direct‐bonded aluminum/alumina as Substrate in high‐power devices

International Journal of Applied Ceramic Technology ◽

10.1111/ijac.13706 ◽

2021 ◽

Author(s):

Wei‐Che Chao ◽

Chien‐Cheng Lin ◽

Kun‐Lin Lin

Keyword(s):

Nickel Film ◽

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Comparative study between semiconductor power devices based on silicon Si, silicon carbide SiC and gallium nitrate GaN used in the electrical system subassembly of an electric vehicle

10.1109/cas52836.2021.9604127 ◽

2021 ◽

Author(s):

Ion Catalin Sburlan ◽

Ionut Vasile ◽

Emil Tudor

Keyword(s):

Silicon Carbide ◽

Comparative Study ◽

Electric Vehicle ◽

Gallium Nitrate ◽

Electrical System ◽

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Technology for High-Power Devices

Power Semiconductor Devices and Circuits ◽

10.1007/978-1-4615-3322-1_1 ◽

1992 ◽

pp. 1-30

Author(s):

Tadahiro Ohmi

Keyword(s):

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Fiber Lasers: High-Power Devices in Compact Packages

Optics and Photonics News ◽

10.1364/opn.16.6.000036 ◽

2005 ◽

Vol 16 (6) ◽

pp. 36 ◽

Author(s):

Nasser Peyghambarian ◽

Axel Schülzgen

Keyword(s):

Fiber Lasers ◽

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Characterizing medium-voltage high-power devices under conventional and soft-switching conditions

Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370) ◽

10.1109/ias.1999.799983 ◽

2003 ◽

Author(s):

J. von Bloh ◽

R.W. De Doncker

Keyword(s):

Soft Switching ◽

Power Devices ◽

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