Carrier Scattering Rates Measured by Hall Effect and Magnetoresistance in the High-Tc Oxides

Author(s):  
N. P. Ong ◽  
T. R. Chien ◽  
T. W. Jing ◽  
T. V. Ramakrishnan ◽  
Z. Z. Wang ◽  
...  
2004 ◽  
Vol 408-410 ◽  
pp. 242-243 ◽  
Author(s):  
J. Bok ◽  
J. Bouvier

1987 ◽  
Vol 01 (02) ◽  
pp. 413-417
Author(s):  
J.D. Hettinger ◽  
A.G. Swanson ◽  
J.S. Brooks ◽  
Y.P. Ma

We have measured the transition temperature, critical field, magnetoresistance, and Hall effect for the high temperature superconductor Y-Ba-Cu-O in magnetic fields up to 23T in the temperature range 4.2 to 125K. Meissner studies at zero magnetic field were also performed in some cases. We find a strong dependence of these parameters on the relative percentage of the correct phase of Y-Ba-Cu-O in the sample. We report new results on magnetoresistance and Hall effect in these materials.


1987 ◽  
Vol 64 (4) ◽  
pp. 489-491 ◽  
Author(s):  
Duan Hong-min ◽  
Lu Li ◽  
Wang Xie-mei ◽  
Lin Shu-yuan ◽  
Zhang Dian-lin
Keyword(s):  

2001 ◽  
Vol 62 (1-2) ◽  
pp. 83-87 ◽  
Author(s):  
H. Kontani ◽  
K. Kanki ◽  
K. Ueda

1989 ◽  
Vol 79 (1) ◽  
pp. 146-150 ◽  
Author(s):  
G.C. Vezzoli ◽  
T. Burke ◽  
B.M. Moon ◽  
B. Lalevic ◽  
A. Safari ◽  
...  
Keyword(s):  

Carbon ◽  
1982 ◽  
Vol 20 (2) ◽  
pp. 128
Author(s):  
Ko Sugihara

1994 ◽  
Vol 235-240 ◽  
pp. 3141-3142 ◽  
Author(s):  
A.V. Samoilov ◽  
A. Legris ◽  
F. Rullier-Albenque ◽  
P. Lejay ◽  
S. Bouffard ◽  
...  

1985 ◽  
Vol 54 ◽  
Author(s):  
J. C. Hensel

ABSTRACTThis paper reviews our recent studies of electrical transport in thin suicide films. Resistivity as a function of temperature, Hall effect, and magnetoresistance have been characterized for CoSi2 and NiSi2 and in conjunction with band theory provide estimates of important electronic parameters, viz. carrier densities and carrier scattering lengths. Resistivity data for TiSi2 and TaSi2 are included. Also examined in resistivity are (i) effects produced by ion bombardment which show CoSi2 to have an unusual susceptibility to radiation damage and (ii) classical size effects in the very thin film regime which show the boundary scattering to be principally specular. As an application we describe a Si/CoSi2/Si heterostructure transistor recently developed.


2020 ◽  
Vol 22 (7) ◽  
pp. 4010-4014
Author(s):  
Xiangtian Bu ◽  
Shudong Wang

Through first-principles simulations combined with the Wannier function interpolation method, the hot carrier scattering rates of D-carbon are studied.


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