Quantum Cascade Electroluminescence in the GaAs/AIGaAs Material System

1998 ◽  
pp. 17-21
Author(s):  
Peter Kruck ◽  
Manfred Helm ◽  
Gottfried Strasser ◽  
Lubos Hvozdara ◽  
Erich Gornik
Keyword(s):  
Material System ◽  
Quantum Cascade

Quantum Cascade Lasers in the InAs/AlSb Material System

2015 ◽  
Vol 21 (6) ◽  
pp. 85-96 ◽  
Author(s):  
Alexei N. Baranov ◽  
Roland Teissier
Keyword(s):  
Quantum Cascade Lasers ◽  
Material System ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Quantum cascade emission in the III-nitride material system designed with effective interface grading

2015 ◽  
Vol 107 (13) ◽  
pp. 132104 ◽  
Author(s):  
Alex Y. Song ◽  
Rajaram Bhat ◽  
Andrew A. Allerman ◽  
Jie Wang ◽  
Tzu-Yung Huang ◽  
...  
Keyword(s):  
Material System ◽  
Quantum Cascade ◽  
Nitride Material ◽  
Cascade Emission

Quantum cascade laser utilising aluminium-free material system: InGaAs/GaAsSb lattice-matched to InP

2009 ◽  
Vol 45 (20) ◽  
pp. 1031 ◽  
Author(s):  
M. Nobile ◽  
P. Klang ◽  
E. Mujagić ◽  
H. Detz ◽  
A.M. Andrews ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Material System ◽  
Quantum Cascade ◽  
Free Material ◽  
Lattice Matched

scholarly journals Optimization of THz quantum cascade lasers with an active module based on two-quantum wells for high-temperature operation

2021 ◽  
Vol 2086 (1) ◽  
pp. 012086
Author(s):  
R A Khabibullin ◽  
D S Ponomarev ◽  
D V Ushakov ◽  
A A Afonenko
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Quantum Cascade Lasers ◽  
Material System ◽  
Quantum Cascade ◽  
Operation Temperature ◽  
Alternative Material ◽  
Record Value ◽  
High Temperature Operation ◽  
Cascade Lasers

Abstract Over the past two decades, the operation temperature of terahertz quantum cascade lasers (THz QCLs) has continuously increased from cryogenic level to the current record value of 250 K (about -23°C) [1]. Here we review the state-of-the-art and future prospects of high-temperature THz QCL designs with two-quantum wells in active module based on conventional heterojunction GaAs/AlGaAs and alternative material system HgCdTe. We have analyzed the temperature dependence of the peak gain and predicted the maximum operation temperatures of the given designs.

InGaAs/GaAsSb Heterostructures: Aluminum-Free Intersubband Devices

2009 ◽  
Vol 1195 ◽  
Author(s):  
Michele Nobile ◽  
Gottfried Strasser ◽  
Hermann Detz ◽  
Elvis Mujagic ◽  
Aaron Andrews ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Multiple Quantum Well ◽  
Wavelength Region ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Material System ◽  
Quantum Cascade ◽  
Intersubband Absorption

AbstractAn experimental study on mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in multiple quantum well samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.

Terahertz quantum cascade laser in the InGaAs/GaAsSb material system

2010 ◽  
Author(s):  
C. Deutsch ◽  
A. Benz ◽  
H. Detz ◽  
M. Nobile ◽  
A. M. Andrews ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Material System ◽  
Quantum Cascade

Two-phonon-resonance terahertz quantum cascade laser based on GaN/AlGaN material system

2019 ◽  
Vol 34 (7) ◽  
pp. 075018
Author(s):  
Jinfeng Li ◽  
Ting Wan ◽  
Changshui Chen
Keyword(s):  
Quantum Cascade Laser ◽  
Material System ◽  
Quantum Cascade
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