scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

2000 ◽  
Vol 360 (1-2) ◽  
pp. 195-204 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
P. Uusimaa ◽  
A. Salokatve ◽  
M. Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Green Laser ◽  
Gaas Substrates

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 812-816 ◽  
Author(s):  
Yoshikatsu Ichimura ◽  
Katsumi Kishino ◽  
Mitsunari Satake ◽  
Masaru Kuramoto ◽  
Atsushi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Compound System ◽  
Gaas Substrates

Growth and Characterization of Inas Quantum Dots on Silicon

1999 ◽  
Vol 583 ◽  
Author(s):  
L. Hansen ◽  
A. Ankudinov ◽  
F. Bensing ◽  
J. Wagner ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Material System ◽  
Inas Quantum Dots ◽  
New Material ◽  
The One ◽  
Insight Into

AbstractUp to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

scholarly journals Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser

2011 ◽  
Vol 291 ◽  
pp. 012008
Author(s):  
V V Mamutin ◽  
V M Ustinov ◽  
N D Ilyinskaya ◽  
M V Baydakova ◽  
B Ya Ber ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Cascade

Molecular Beam Epitaxy and Characterization of Layered In2Se3Films Grown on Slightly Misoriented (001)GaAs Substrates

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 668-673 ◽  
Author(s):  
Tomohiko Ohtsuka ◽  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

2007 ◽  
Vol 301-302 ◽  
pp. 552-555 ◽  
Author(s):  
J. Ibáñez ◽  
M. Henini ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Schmidbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gaas Substrates
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