Intrinsic Point Defect Clustering in Si: A Study by HVEM and HREM in Situ Electron Irradiation

1997 ◽  
pp. 63-92 ◽  
Author(s):  
Ludmila Fedina ◽  
Anton Gutakovskii ◽  
Alexander Aseev ◽  
Joseph Van Landuyt ◽  
Jan Vanhellemont
Keyword(s):  
Point Defect ◽  
Electron Irradiation ◽  
Intrinsic Point Defect

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

2015 ◽  
Vol 12 (3) ◽  
pp. 275-281 ◽  
Author(s):  
J. Vanhellemont ◽  
S. Anada ◽  
T. Nagase ◽  
H. Yasuda ◽  
H. Bender ◽  
...  
Keyword(s):  
Point Defect ◽  
Intrinsic Point Defect ◽  
Si Nanowire ◽  
Defect Behavior

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

scholarly journals Simulating Neutron Radiation Damage of Graphite by In-situ Electron Irradiation

2014 ◽  
Vol 522 ◽  
pp. 012051
Author(s):  
Brindusa E Mironov ◽  
H M Freeman ◽  
R M D Brydson ◽  
A V K Westwood ◽  
A J Scott
Keyword(s):  
Radiation Damage ◽  
Electron Irradiation ◽  
Neutron Radiation ◽  
Neutron Radiation Damage

COMPARISON OF ELECTRON IRRADIATION ON THE FORMATION OF SURFACE DEFECTS IN SITU AND POST THIN-FILM LiF/Si(111) DEPOSITION

2021 ◽  
pp. 138902
Author(s):  
U.B. Sharopov ◽  
K. Kaur ◽  
M.K. Kurbanov ◽  
D.Sh. Saidov ◽  
Sh.R. Nurmatov ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Irradiation ◽  
Surface Defects

Dependence of the properties of Cd1−x ZnxTe crystals on the type of intrinsic point defect formed by oxygen

1999 ◽  
Vol 33 (5) ◽  
pp. 531-535
Author(s):  
N. K. Morozova ◽  
I. A. Karetnikov ◽  
V. V. Blinov ◽  
V. K. Komar ◽  
V. G. Galstan ◽  
...  
Keyword(s):  
Point Defect ◽  
Intrinsic Point Defect

In-situ electron irradiation studies of metal-carbon nanostructures

2008 ◽  
pp. 121-122
Author(s):  
L. Sun ◽  
Y. Gan ◽  
J. A. Rodriguez-Manzo ◽  
M. Terrones ◽  
A. V. Krasheninnikov ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Carbon Nanostructures
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