Radiotherinoluminescence with in situ electron irradiation

1990 ◽  
Vol 28 (9) ◽  
pp. 1641-1645 ◽  
Author(s):  
Buckley Crist
Keyword(s):  
2014 ◽  
Vol 522 ◽  
pp. 012051
Author(s):  
Brindusa E Mironov ◽  
H M Freeman ◽  
R M D Brydson ◽  
A V K Westwood ◽  
A J Scott

2021 ◽  
pp. 138902
Author(s):  
U.B. Sharopov ◽  
K. Kaur ◽  
M.K. Kurbanov ◽  
D.Sh. Saidov ◽  
Sh.R. Nurmatov ◽  
...  

Author(s):  
L. Sun ◽  
Y. Gan ◽  
J. A. Rodriguez-Manzo ◽  
M. Terrones ◽  
A. V. Krasheninnikov ◽  
...  

2000 ◽  
Vol 6 (4) ◽  
pp. 362-367 ◽  
Author(s):  
Hajime Matsumoto ◽  
Eiichi Sukedai ◽  
Hatsujiro Hashimoto

AbstractAnnihilation behaviors of athermal ω-phase crystals formed by cooling at 131 K for 10.8 ks under four different electron irradiation conditions of acceleration voltages of 200 kV and 160 kV, and beam currents of approximately 20 pA/cm2 and 5 pA/cm2 were investigated using in situ dark field and HREM observation methods at 131 K. The effect of acceleration voltages on the lifetimes is recognized, i.e., in the case of approximately equal electron beam current, lifetimes at 200 kV become shorter than those at 160 kV. Also, lifetimes depend on the electron beam current at 200 kV, i.e., the higher the beam currents, the shorter the lifetimes become. However, no distinct dependence can be seen at 160 kV. Since annihilations of athermal ω-phase crystals begin after the electron irradiation for a certain period in each condition, which depends on acceleration voltages and beam currents, it is suggested that the annihilation behaviors have incubation periods.


Nanoscale ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 6327-6333 ◽  
Author(s):  
Dejiong Zhang ◽  
Chuanhong Jin ◽  
He Tian ◽  
Yalin Xiong ◽  
Hui Zhang ◽  
...  

An In situ atomic scale study of the surface oxidation of Pd nanocrystals.


1998 ◽  
Vol 540 ◽  
Author(s):  
M.A. stevens Kalceff ◽  
M.R. Phillips ◽  
M. Toth ◽  
A.R. Moon ◽  
D.N. Jamieson ◽  
...  

AbstractCathodoluminescence (CL) microanalysis (spectroscopy and microscopy) in an electron microscope enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure of wide band gap materials to be characterized with high spatial (lateral and depth) resolution and sensitivity. CL microanalytical techniques allow the in situ monitoring of electron irradiation induced damage, the post irradiation assessment of damage induced by other energetic radiation, and the investigation of irradiation induced electromigration of mobile charged defect species. Electron irradiated silicon dioxide polymorphs and MeV H+ ion implanted Type Ila diamond have been investigated using CL microanalytical techniques.


1997 ◽  
Vol 3 (S2) ◽  
pp. 601-602
Author(s):  
S.-J. Chen ◽  
U. Dahmen ◽  
D.G. Howitt

The interaction of radiation produced point defects with a dislocation microstructure at high temperature is of considerable interest and careful high voltage microscopy experiments can provide valuable insight into the mechanisms. Veyssière and Westmacott carried out in-situ experiments monitoring the partial dislocation climbs in Ni3Al induced by thermal vacancies as well as by Frenkel pairs produced during irradiation.1 We report here the results of some preliminary experiments we performed on alumina (A12O3) single crystals with high dislocation densities to study the modification of the microstructure by electron irradiation at high temperature.The dislocation microstructures were produced by shock wave deformation using a high-velocity impact technique. The technique is capable of producing a very high density of defects consisting primarily of basal twins, and slips on the basal, pyramidal and rhombohedral planes in alumina. The dislocations are all of glide type, mostly forming shear bands. A typical microstructure prior to irradiation is shown in figure la.


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