Low-Temperature Thermopower and Other Transport Properties of Aluminium Containing Dilute Point Defects

Author(s):  
K. Böning
1991 ◽  
Vol 169 (1-4) ◽  
pp. 639-640 ◽  
Author(s):  
Chizuko Murayama ◽  
Tsuyoshi Tamegai ◽  
Yasuhiro Iye ◽  
Nobuo Môri ◽  
Isamu Oguro ◽  
...  

2008 ◽  
Vol 20 (46) ◽  
pp. 465223 ◽  
Author(s):  
M ElMassalami ◽  
R E Rapp ◽  
J P Sinnecker ◽  
A V Andreev ◽  
J Prokleska

2011 ◽  
Vol 109 (11) ◽  
pp. 113716 ◽  
Author(s):  
Q. S. Zeng ◽  
C. R. Rotundu ◽  
W. L. Mao ◽  
J. H. Dai ◽  
Y. M. Xiao ◽  
...  

1996 ◽  
Vol 77 (6) ◽  
pp. 1071-1074 ◽  
Author(s):  
K. Edagawa ◽  
M. A. Chernikov ◽  
A. D. Bianchi ◽  
E. Felder ◽  
U. Gubler ◽  
...  

2013 ◽  
Vol 82 (7) ◽  
pp. 074718 ◽  
Author(s):  
Takahide Yamaguchi ◽  
Eiichiro Watanabe ◽  
Hirotaka Osato ◽  
Daiju Tsuya ◽  
Keita Deguchi ◽  
...  

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.


2015 ◽  
Vol 1736 ◽  
Author(s):  
M. A. Reshchikov ◽  
J.D. McNamara ◽  
A. Usikov ◽  
H. Helava ◽  
Yu. Makarov

ABSTRACTWe have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.


1969 ◽  
Vol 40 (2) ◽  
pp. 602-604 ◽  
Author(s):  
H. N. S. Lee ◽  
H. McKinzie ◽  
D. S. Tannhauser ◽  
A. Wold

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