Hole Transport in Glow Discharge a-SiGex:H,(F) Alloys

Author(s):  
S. Oda ◽  
S. Takagi ◽  
S. Ishihara ◽  
I. Shimizu
1984 ◽  
Vol 23 (Part 2, No. 9) ◽  
pp. L703-L705 ◽  
Author(s):  
Yoshikazu Nakayama ◽  
Koji Akiyama ◽  
Narita Haga ◽  
Takao Kawamura

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-357-Pr3-362 ◽  
Author(s):  
D. D. Papakonstantinou ◽  
D. Mataras ◽  
Arefi-Khonsari

1982 ◽  
Vol 43 (6) ◽  
pp. 875-881 ◽  
Author(s):  
B. Dubreuil ◽  
P. Pignolet ◽  
A. Catherinot ◽  
P. Davy

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1025-C4-1028 ◽  
Author(s):  
R. Carius ◽  
R. Fischer ◽  
E. Holzenkämpfer
Keyword(s):  

2010 ◽  
Vol 130 (11) ◽  
pp. 1004-1008
Author(s):  
Shinobu Hayashi ◽  
Kohki Satoh ◽  
Hidenori Itoh

2011 ◽  
Vol 131 (9) ◽  
pp. 757-763
Author(s):  
Yasuhiro Itoh ◽  
Takamasa Oshita ◽  
Kohki Satoh ◽  
Hidenori Itoh

2008 ◽  
Author(s):  
Christoph Zimmermann ◽  
Manuel Bösing ◽  
Florian Lindla ◽  
Alaa Abdellah ◽  
Frank Jessen ◽  
...  

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2003 ◽  
Vol 79 (10) ◽  
pp. 1002-1008 ◽  
Author(s):  
Koichi TAKAKI ◽  
Tamiya FUJIWARA ◽  
Fumiyoshi TOCHIKUBO

Author(s):  
Sergey S. Sysoev ◽  
Almaz I. Saifutdinov ◽  
Stepan I. Eliseev ◽  
A. A. Kudryavtsev ◽  
Vladimir S. Bekasov

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