ABSTRACTThe presence of low mobility surface electrons on n-Hg1−1CdxTe is generally not apparent in the temperature dependence of the Hall Coefficient (RH) or the Hall mobility (µH) of the layer. However, its influence is clearly seen in the magnetic field (B-field) dependence of RH. The B-field dependence of RH can be analyzed to extract the bulk and surface carrier concentrations and their respective mobilities.This diagnostic technique has been used for evaluating epitaxial Hg1−xCdxTe layers grown by organometallic vapor phase epitaxy (OMVPE), which have been converted to n-type by annealing in Hg overpressure. In addition, the effect of anodic sulfide passivation on the B-field dependence of Hall coefficient is also outlined.
Surface Electrons at Plasma Walls