Quantum transport of surface electrons over liquid helium in magnetic field

1993 ◽  
Vol 91 (5-6) ◽  
pp. 371-389 ◽  
Author(s):  
Yu. Z. Kovdrya ◽  
V. A. Nikolayenko ◽  
O. I. Kirichek ◽  
S. S. Sokolov ◽  
V. N. Grigor'ev
2021 ◽  
Vol 103 (5) ◽  
Author(s):  
A. A. Zadorozhko ◽  
J. Chen ◽  
A. D. Chepelianskii ◽  
D. Konstantinov

2021 ◽  
Vol 126 (10) ◽  
Author(s):  
Erika Kawakami ◽  
Asem Elarabi ◽  
Denis Konstantinov

1993 ◽  
Vol 56 (2-3) ◽  
pp. 2725-2730 ◽  
Author(s):  
A. Rotger ◽  
C. Schlenker ◽  
J. Dumas ◽  
J. Marcus ◽  
S. Dubois ◽  
...  

2017 ◽  
Vol 110 (21) ◽  
pp. 212405 ◽  
Author(s):  
Zhiqiang Zhong ◽  
Xia Wang ◽  
Junpei Zhang ◽  
Haizheng Zhong ◽  
Jun-Bo Han

1992 ◽  
Vol 11 (2) ◽  
pp. 241-244 ◽  
Author(s):  
S. Chaudhuri ◽  
S. Bandyopadhyay ◽  
M. Cahay

1989 ◽  
Vol 161 ◽  
Author(s):  
K.K. Parat ◽  
N.R. Taskar ◽  
I.B. Bhat ◽  
S.K. Ghandhi

ABSTRACTThe presence of low mobility surface electrons on n-Hg1−1CdxTe is generally not apparent in the temperature dependence of the Hall Coefficient (RH) or the Hall mobility (µH) of the layer. However, its influence is clearly seen in the magnetic field (B-field) dependence of RH. The B-field dependence of RH can be analyzed to extract the bulk and surface carrier concentrations and their respective mobilities.This diagnostic technique has been used for evaluating epitaxial Hg1−xCdxTe layers grown by organometallic vapor phase epitaxy (OMVPE), which have been converted to n-type by annealing in Hg overpressure. In addition, the effect of anodic sulfide passivation on the B-field dependence of Hall coefficient is also outlined.


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