Combustion of Solid Fuels under the Conditions of High Temperature and Various Oxygen Concentration

Author(s):  
P. Anna ◽  
W. Yang ◽  
W. Blasiak
AIAA Journal ◽  
1969 ◽  
Vol 7 (9) ◽  
pp. 1682-1687 ◽  
Author(s):  
LOUIS J. SPADACCINI ◽  
WALLACE CHINITZ

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.


Author(s):  
M.M. Nekhamin ◽  
D.L. Bondzyk

The existing difference in the models used to describe the burning rate of solid fuel particles, and, accordingly, the difference in the constants appearing in them, determines the relevance of the formulation of the relation between the constants known from the literature and the parameters that must be set in programs for CFD modeling of heat and power processes. This, in particular, relates to modeling the combustion of solid fuels in the well-known program ANSYS FLUENT. The paper outlines a possible approach to solving this problem. Bibl. 5, Fig. 3.


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